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2SB1216S-E

Onsemi

2SB1216S-E by Onsemi

The Onsemi 2SB1216S-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it has through-hole terminals and a power dissipation of 20W in an inline style package.

Median Price

$0.908

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 150 parts In-Stock

1+ parts

$1.410

100+ parts

$0.588

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-

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150

$1.410

$0.588

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Chip1Stop

Japan . 180 parts In-Stock

1+ parts

$2.880

100+ parts

$0.909

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-

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180

$2.880

$0.909

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-

Rochester

USA . 28,496 parts In-Stock

1+ parts

-

100+ parts

$0.407

1k+ parts

$0.338

10k+ parts

$0.301

28,496

-

$0.407

$0.338

$0.301

Farnell

UK . 28,496 parts In-Stock

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-

100+ parts

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$0.293

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28,496

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$0.293

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Distributors (In-Stock)

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Digiode

USA . 2,166 parts In-Stock

1+ parts

$0.332

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2,166

$0.332

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Chip Stock

USA . 24,000 parts In-Stock

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24,000

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Vyrian

USA . 6,367 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 165 parts In-Stock

1+ parts

$0.262

100+ parts

-

1k+ parts

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10k+ parts

$0.252

165

$0.262

-

-

$0.252

Northwest PG Solutions

USA . 666 parts In-Stock

1+ parts

$0.289

100+ parts

-

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$0.255

666

$0.289

-

-

$0.255

Corohmni

South Africa . 341 parts In-Stock

1+ parts

$0.293

100+ parts

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341

$0.293

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Corphita

USA . 1,357 parts In-Stock

1+ parts

$0.314

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1,357

$0.314

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Continental Prestige Electronics

USA . 11,096 parts In-Stock

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$0.293

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11,096

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$0.293

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SupplyDigital Components

Austria . 8,204 parts In-Stock

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Microchip USA

USA . 7,574 parts In-Stock

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Problanco Electronics

Mexico . 7,398 parts In-Stock

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Kulean Microsystems

USA . 5,742 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,643 parts In-Stock

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Perfect Parts

USA . 1,683 parts In-Stock

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1,683

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TANS Electronics

Latvia . 1,277 parts In-Stock

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Authorized Procurement Solutions

USA . 180 parts In-Stock

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180

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GreenTree Electronics

Israel . 180 parts In-Stock

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180

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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135

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Metaverse IC Inc.

Canada . 130 parts In-Stock

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130

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Overview

Enhance your electronic projects with the high-quality 2SB1216S-E PNP transistor from Onsemi. Manufactured by a trusted industry leader, this small signal BJT offers superior performance in switching applications. With a maximum power dissipation of 20W and a collector current of 4A, this transistor delivers reliable results every time. Whether you're building a circuit for amplification or control, the 2SB1216S-E provides the value and benefits you need to succeed. Upgrade your designs today with this advanced component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high side switch configurations and complementary symmetry circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and easy integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring efficient performance in applications that require rapid on/off transitions.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows for reliable operation under load without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 100 V

High voltage rating enables the transistor to handle a wide range of applications that require higher voltages.

Maximum Collector Current (IC): 4 A

Capable of handling relatively high currents, making it suitable for applications that require power switching.

Nominal Transition Frequency (fT): 130 MHz

High transition frequency allows for fast switching speeds, ideal for applications that demand rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1216S-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1216S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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