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CPH5518-TL-E

Onsemi

CPH5518-TL-E by Onsemi

CPH5518-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. It boasts a max power dissipation of 1.2W, min hFE of 200, and max IC of 1A. With an operating temp up to 150°C, it's suitable for various electronic circuits requiring high current amplification.

Median Price

$0.245

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 88 parts In-Stock

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$0.920

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Rochester

USA . 109,003 parts In-Stock

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$0.254

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$0.211

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$0.188

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$0.254

$0.211

$0.188

Farnell

UK . 109,000 parts In-Stock

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$0.245

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Verical

USA . 80,000 parts In-Stock

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$0.235

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Mouser Electronics

USA . 335 parts In-Stock

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$0.224

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$0.224

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Digiode

USA . 831 parts In-Stock

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$0.199

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831

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Flip Electronics

USA . 90,000 parts In-Stock

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Vyrian

USA . 7,071 parts In-Stock

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Corphita

USA . 1,595 parts In-Stock

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$0.188

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$0.188

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Corohmni

South Africa . 379 parts In-Stock

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$0.209

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Native Components

USA . 476 parts In-Stock

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$1.041

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Northwest PG Solutions

USA . 1,458 parts In-Stock

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$1.145

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Continental Prestige Electronics

USA . 121,000 parts In-Stock

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$0.194

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QUARKTWIN TECHNOLOGY LTD

USA . 14,050 parts In-Stock

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TANS Electronics

Latvia . 5,767 parts In-Stock

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Kulean Microsystems

USA . 4,670 parts In-Stock

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Problanco Electronics

Mexico . 1,087 parts In-Stock

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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SupplyDigital Components

Austria . 311 parts In-Stock

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Overview

Elevate your electronic projects with the CPH5518-TL-E by Onsemi, a versatile small signal bipolar junction transistor that offers both NPN and PNP channel types. Manufactured by the reputable Onsemi brand, this surface-mount component boasts a maximum power dissipation of 1.2W and a minimum DC current gain of 200, making it ideal for a wide range of applications. From amplifiers to switching circuits, this high-quality transistor ensures reliable performance and efficiency. Upgrade your designs today with the CPH5518-TL-E and experience the value and benefits that only Onsemi can deliver.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design and compatibility with various applications.

Surface Mount: YES

Surface mount capability makes it easier for integration into compact electronic devices and PCB designs.

Maximum Power Dissipation (Abs): 1.2 W

With a high maximum power dissipation, this transistor can handle relatively high power loads without overheating.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures efficient amplification and signal processing in the circuit.

Maximum Operating Temperature: 150 °C

Being able to operate at up to 150°C makes this transistor suitable for applications that require high temperature tolerance.

Maximum Collector Current (IC): 1 A

The high maximum collector current rating allows for handling larger current loads without causing damage to the transistor.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish offers good solderability and reliability during assembly processes.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes without degradation.

Peak Reflow Temperature °C: 260

Being able to withstand a peak reflow temperature of 260°C ensures reliability during soldering and assembly procedures.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5518-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CPH5518-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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