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CPH5519

Onsemi

CPH5519 by Onsemi

CPH5519 by Onsemi is a Small Signal BJT available in NPN and PNP types. With 1.1W power dissipation, it offers a min hFE of 60. Ideal for applications requiring 0.1A collector current at temperatures up to 150 °C, this transistor is surface mountable for easy integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,970 parts In-Stock

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1,970

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Digiode

USA . 1,129 parts In-Stock

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1,129

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Distributors (Availability)

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Problanco Electronics

Mexico . 3,090 parts In-Stock

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3,090

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Northwest PG Solutions

USA . 2,211 parts In-Stock

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$3.430

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2,211

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SupplyDigital Components

Austria . 1,964 parts In-Stock

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1,964

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TANS Electronics

Latvia . 1,205 parts In-Stock

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1,205

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Kulean Microsystems

USA . 608 parts In-Stock

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608

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UHIMA Technologies

Türkiye . 451 parts In-Stock

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451

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Native Components

USA . 350 parts In-Stock

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$3.395

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350

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Corphita

USA . 265 parts In-Stock

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265

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Corohmni

South Africa . 151 parts In-Stock

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Overview

Discover the superior quality and reliability of the Onsemi CPH5519, a versatile Small Signal Bipolar Junction Transistor suitable for a range of applications. With both NPN and PNP polarity options, this surface-mount device offers a maximum power dissipation of 1.1 W and a minimum DC current gain of 60, ensuring optimal performance in various circuits. From amplifiers to voltage regulators, the CPH5519 provides exceptional value and efficiency, making it the ideal choice for your electronic projects. Elevate your designs with Onsemi's trusted technology and unlock limitless possibilities.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Versatile design allows for use in a wide range of circuit configurations.

Surface Mount: YES

Ease of installation and compatibility with modern PCB design.

Maximum Power Dissipation (Abs): 1.1 W

Can handle higher power levels without risk of damage, providing reliability.

Minimum DC Current Gain (hFE): 60

Consistent and stable amplification characteristics for signal processing.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various environments.

Maximum Collector Current (IC): 0.1 A

Sufficient current handling capacity for many small signal applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5519 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

60

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

CPH5519 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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