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CPH5517-TL-E

Onsemi

CPH5517-TL-E by Onsemi

Onsemi's CPH5517-TL-E is a Small Signal BJT with NPN/PNP polarity, 2 elements in common base configuration. It has hFE of 200, VCE of 50V, and fT of 420MHz. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.269

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.279

1k+ parts

$0.232

10k+ parts

$0.207

6,000

-

$0.279

$0.232

$0.207

Verical

USA . 6,000 parts In-Stock

1+ parts

-

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$0.259

6,000

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$0.259

Farnell

UK . 895 parts In-Stock

1+ parts

-

100+ parts

$0.212

1k+ parts

$0.162

10k+ parts

-

895

-

$0.212

$0.162

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Element14

Singapore . 895 parts In-Stock

1+ parts

-

100+ parts

$0.491

1k+ parts

$0.482

10k+ parts

$0.463

895

-

$0.491

$0.482

$0.463

Distributors (In-Stock)

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Digiode

USA . 1,057 parts In-Stock

1+ parts

$0.228

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1,057

$0.228

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Vyrian

USA . 2,219 parts In-Stock

1+ parts

$0.240

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2,219

$0.240

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Bristol Electronics

USA . 1,651 parts In-Stock

1+ parts

$0.487

100+ parts

$0.244

1k+ parts

$0.098

10k+ parts

-

1,651

$0.487

$0.244

$0.098

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Chip Stock

USA . 58,000 parts In-Stock

1+ parts

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58,000

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Flip Electronics

USA . 15,000 parts In-Stock

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15,000

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ACDS - Activité Composants Distribution Service

France . 1,651 parts In-Stock

1+ parts

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1,651

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Dan-Mar Components

USA . 1,651 parts In-Stock

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1,651

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Distributors (Availability)

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Continental Prestige Electronics

USA . 1,175 parts In-Stock

1+ parts

$0.087

100+ parts

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1,175

$0.087

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Corphita

USA . 1,337 parts In-Stock

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$0.216

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1,337

$0.216

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Corohmni

South Africa . 376 parts In-Stock

1+ parts

$0.240

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376

$0.240

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Component Stockers USA

USA . 167 parts In-Stock

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$0.600

100+ parts

$0.360

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167

$0.600

$0.360

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QUARKTWIN TECHNOLOGY LTD

USA . 17,442 parts In-Stock

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Kulean Microsystems

USA . 6,769 parts In-Stock

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6,769

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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TANS Electronics

Latvia . 4,242 parts In-Stock

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4,242

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SupplyDigital Components

Austria . 3,915 parts In-Stock

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3,915

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Problanco Electronics

Mexico . 2,113 parts In-Stock

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Northwest PG Solutions

USA . 1,014 parts In-Stock

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Native Components

USA . 676 parts In-Stock

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UHIMA Technologies

Türkiye . 585 parts In-Stock

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585

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Overview

Discover the high-quality CPH5517-TL-E small signal bipolar junction transistor by Onsemi, a leading manufacturer in electronic components. Ideal for switching applications, this NPN and PNP transistor offers reliable performance and versatility in a compact package shape. With a minimum DC current gain of 200 and a maximum collector-emitter voltage of 50V, this transistor delivers exceptional value and efficiency. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the CPH5517-TL-E provides the power and reliability you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP configurations allows for versatile use in various circuit designs.

Configuration: COMMON BASE, 2 ELEMENTS

Common base configuration ensures high current gain and low output impedance, making it ideal for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards, saving space and enabling efficient assembly.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium power applications where a collector-emitter voltage of up to 50V is required.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1A of collector current, making it suitable for a wide range of switching applications.

Terminal Finish: TIN BISMUTH

Provides reliable and corrosion-resistant terminal finish, ensuring long-term performance and durability.

Nominal Transition Frequency (fT): 420 MHz

High transition frequency allows for fast switching speeds and ensures efficient performance in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5517-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH5517-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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