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CPH5541-TL-E

Onsemi

CPH5541-TL-E by Onsemi

CPH5541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP polarity. It has 2 elements in common emitter configuration, suitable for switching applications. With a hFE of 300, Vce of 30V, and fT of 540MHz, it offers high performance in a small outline package.

Median Price

$0.665

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 384 parts In-Stock

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$0.665

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384

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Chip Stock

USA . 72,000 parts In-Stock

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72,000

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Vyrian

USA . 5,089 parts In-Stock

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5,089

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Distributors (Availability)

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Corphita

USA . 1,241 parts In-Stock

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$0.630

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1,241

$0.630

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Corohmni

South Africa . 257 parts In-Stock

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$0.700

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257

$0.700

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Native Components

USA . 684 parts In-Stock

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$10.080

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684

$10.080

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Northwest PG Solutions

USA . 881 parts In-Stock

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$11.088

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$9.979

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881

$11.088

$9.979

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Kepictronics

USA . 29,450 parts In-Stock

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29,450

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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QUARKTWIN TECHNOLOGY LTD

USA . 14,791 parts In-Stock

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14,791

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TANS Electronics

Latvia . 7,268 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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6,000

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SupplyDigital Components

Austria . 5,691 parts In-Stock

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5,691

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Kulean Microsystems

USA . 4,350 parts In-Stock

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4,350

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Problanco Electronics

Mexico . 3,895 parts In-Stock

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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131

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Overview

Discover the power of the CPH5541-TL-E by Onsemi, a high-quality small signal bipolar junction transistor designed for switching applications. With its NPN and PNP configuration and common emitter setup, this transistor offers unmatched performance and reliability. Ideal for a wide range of electronic projects, this product is perfect for amplifying signals and controlling circuits with ease. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the CPH5541-TL-E brings to your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP types allows for versatile use in a variety of applications, providing flexibility for different circuit designs.

Configuration: COMMON EMITTER, 2 ELEMENTS

The common emitter configuration with 2 elements allows for efficient amplification and switching capabilities in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures reliable performance in controlling electronic signals.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Collector-Emitter Voltage: 30 V

The high maximum voltage rating ensures that the transistor can handle a wide range of voltages, making it suitable for different electrical setups.

Nominal Transition Frequency (fT): 540 MHz

With a high transition frequency, this transistor can handle high-frequency signals with precision and minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5541-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH5541-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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