Loading...

CPH5520

Onsemi

CPH5520 by Onsemi

CPH5520 by Onsemi is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.9W, it offers a min hFE of 200. Ideal for applications requiring a max IC of 2A, operating up to 150 °C, making it suitable for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,413 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,413

-

-

-

-

Digiode

USA . 1,128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,128

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 481 parts In-Stock

1+ parts

$3.245

100+ parts

-

1k+ parts

-

10k+ parts

-

481

$3.245

-

-

-

Problanco Electronics

Mexico . 8,052 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,052

-

-

-

-

Kulean Microsystems

USA . 7,907 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,907

-

-

-

-

Corphita

USA . 1,489 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,489

-

-

-

-

SupplyDigital Components

Austria . 896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

896

-

-

-

-

Native Components

USA . 542 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.862

10k+ parts

-

542

-

-

$2.862

-

UHIMA Technologies

Türkiye . 425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

425

-

-

-

-

Corohmni

South Africa . 386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

386

-

-

-

-

TANS Electronics

Latvia . 317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

317

-

-

-

-

Overview

Looking for a reliable and high-quality small signal bipolar junction transistor? Look no further than the CPH5520 by Onsemi. With both NPN and PNP options, this product is versatile for a wide range of applications. From amplifiers to switching circuits, this transistor offers exceptional performance with a maximum collector current of 2 A and a minimum DC current gain of 200. Trust in Onsemi's reputation for excellence and choose the CPH5520 for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Provides flexibility in circuit design as both NPN and PNP types are available.

Surface Mount: YES

Allows for easy and convenient integration into small electronic devices or PCBs.

Maximum Power Dissipation: 0.9 W

Can handle relatively high power dissipation, making it suitable for applications requiring moderate power handling.

Minimum DC Current Gain (hFE): 200

Ensures a high current gain, providing efficient amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, increasing its reliability in various environmental conditions.

Maximum Collector Current (IC): 2 A

Capable of handling relatively high collector currents, making it suitable for applications requiring larger current flows.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5520 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Minimum DC Current Gain (hFE):

200

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

CPH5520 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20