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CPH5504-TL-E

Onsemi

CPH5504-TL-E by Onsemi

CPH5504-TL-E by Onsemi is a NPN BJT transistor with 2 elements in common emitter configuration. It has a hFE of 70, Vce(max) of 50V, and IC(max) of 3A. Ideal for switching applications due to its high transition frequency of 380MHz in a small outline package.

Median Price

$0.284

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7 parts In-Stock

1+ parts

$1.068

100+ parts

$0.429

1k+ parts

$0.293

10k+ parts

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7

$1.068

$0.429

$0.293

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DigiKey

USA . 1,638 parts In-Stock

1+ parts

$1.090

100+ parts

$0.446

1k+ parts

$0.312

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1,638

$1.090

$0.446

$0.312

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Farnell

UK . 88,750 parts In-Stock

1+ parts

-

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$0.222

88,750

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$0.222

Rochester

USA . 50,375 parts In-Stock

1+ parts

-

100+ parts

$0.284

1k+ parts

$0.236

10k+ parts

$0.210

50,375

-

$0.284

$0.236

$0.210

Verical

USA . 27,000 parts In-Stock

1+ parts

-

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$0.263

27,000

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$0.263

Chip1Stop

Japan . 7 parts In-Stock

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7

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Distributors (In-Stock)

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Digiode

USA . 1,956 parts In-Stock

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$0.024

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-

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1,956

$0.024

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Vyrian

USA . 2,159 parts In-Stock

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$0.025

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2,159

$0.025

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Bristol Electronics

USA . 1,850 parts In-Stock

1+ parts

$0.882

100+ parts

$0.326

1k+ parts

$0.229

10k+ parts

-

1,850

$0.882

$0.326

$0.229

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 23,000 parts In-Stock

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R&J Components

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,850 parts In-Stock

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1,850

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Dan-Mar Components

USA . 1,850 parts In-Stock

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1,850

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Distributors (Availability)

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Corphita

USA . 2,401 parts In-Stock

1+ parts

$0.022

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2,401

$0.022

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Corohmni

South Africa . 101 parts In-Stock

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$0.025

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101

$0.025

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Kepictronics

USA . 149,668 parts In-Stock

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149,668

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Continental Prestige Electronics

USA . 42,000 parts In-Stock

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$0.222

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42,000

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$0.222

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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33,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,173 parts In-Stock

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CPlus Electronics

USA . 15,000 parts In-Stock

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Assy Fe

Spain . 15,000 parts In-Stock

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SupplyDigital Components

Austria . 5,387 parts In-Stock

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Problanco Electronics

Mexico . 5,331 parts In-Stock

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TANS Electronics

Latvia . 4,535 parts In-Stock

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4,535

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Kulean Microsystems

USA . 1,585 parts In-Stock

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1,585

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UHIMA Technologies

Türkiye . 861 parts In-Stock

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Native Components

USA . 784 parts In-Stock

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$4.388

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784

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$4.388

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Northwest PG Solutions

USA . 147 parts In-Stock

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$4.434

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147

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$4.434

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Overview

Elevate your electronic projects with the CPH5504-TL-E by Onsemi, a high-quality small signal bipolar junction transistor designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers unparalleled performance and reliability. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 380 MHz, this transistor is perfect for a wide range of applications. Experience the value and benefits of using the CPH5504-TL-E in your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

Commonly used and versatile in many circuit designs, allowing for easy integration into different electronic systems.

Configuration: COMMON EMITTER, 2 ELEMENTS

The common emitter configuration allows for high gain and good linearity, making it ideal for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficiency.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

Compact and space-saving design, suitable for densely populated circuit boards.

Minimum DC Current Gain (hFE): 70

Ensures proper amplification and signal processing in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltages, making it suitable for various voltage requirements in different circuits.

Maximum Collector Current (IC): 3 A

Capable of handling moderate to high current loads, allowing for versatile applications in power circuits.

Nominal Transition Frequency (fT): 380 MHz

Provides high-speed performance for fast switching applications, ensuring quick response times and efficiency.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5504-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G5

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH5504-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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