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CPH5514

Onsemi

CPH5514 by Onsemi

CPH5514 by Onsemi is a PNP BJT with 2 elements, 0.1A max collector current, and 0.5W power dissipation. Ideal for low-power applications requiring SILICON transistors with min hFE of 50. Suitable for surface mount designs in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,194 parts In-Stock

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Vyrian

USA . 649 parts In-Stock

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649

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Distributors (Availability)

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Native Components

USA . 100 parts In-Stock

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$0.141

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$0.135

100

$0.141

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$0.135

Northwest PG Solutions

USA . 1,605 parts In-Stock

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$0.155

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$0.137

1,605

$0.155

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$0.137

Problanco Electronics

Mexico . 3,356 parts In-Stock

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3,356

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TANS Electronics

Latvia . 2,607 parts In-Stock

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2,607

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SupplyDigital Components

Austria . 1,569 parts In-Stock

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1,569

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Kulean Microsystems

USA . 948 parts In-Stock

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948

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Corohmni

South Africa . 427 parts In-Stock

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UHIMA Technologies

Türkiye . 177 parts In-Stock

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Corphita

USA . 128 parts In-Stock

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Overview

Elevate your electronic designs with the CPH5514 by Onsemi, a top-tier manufacturer known for delivering high-quality small signal bipolar junction transistors (BJT). This PNP transistor offers reliability and efficiency in a compact surface-mount package. With a maximum power dissipation of 0.5W and a minimum DC current gain of 50, this versatile component is ideal for a wide range of applications. Trust Onsemi's expertise and invest in the CPH5514 for superior performance and lasting value in your next project.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP bipolar junction transistors are commonly used in applications where the current needs to flow from emitter to collector, making this product suitable for circuits that require this configuration.

Surface Mount: YES

Surface mount technology allows for efficient assembly processes and provides space-saving benefits, making this product ideal for compact electronic devices.

No. of Elements: 2

Having 2 elements allows for more complex circuit designs and configurations, offering versatility in various applications.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 W, this transistor can handle moderate power levels, making it suitable for a range of small signal applications.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable amplification of signals, making this transistor suitable for amplification and signal processing tasks.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a common choice in various electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle low to moderate current levels, making it suitable for small signal applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5514 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

50

No. of Elements:

2

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

CPH5514 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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