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CPH5518

Onsemi

CPH5518 by Onsemi

CPH5518 by Onsemi is a Small Signal BJT available in NPN and PNP types. With 1.2W power dissipation, it offers hFE of 200 for versatile applications. Ideal for surface mount designs, it operates up to 150 °C with a max collector current of 1A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,035 parts In-Stock

1+ parts

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2,035

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Digiode

USA . 1,852 parts In-Stock

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1,852

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 32 parts In-Stock

1+ parts

$0.368

100+ parts

-

1k+ parts

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10k+ parts

$0.353

32

$0.368

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-

$0.353

Northwest PG Solutions

USA . 617 parts In-Stock

1+ parts

$0.405

100+ parts

-

1k+ parts

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$0.357

617

$0.405

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$0.357

Kulean Microsystems

USA . 8,106 parts In-Stock

1+ parts

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8,106

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TANS Electronics

Latvia . 6,925 parts In-Stock

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6,925

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Problanco Electronics

Mexico . 6,393 parts In-Stock

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6,393

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SupplyDigital Components

Austria . 5,957 parts In-Stock

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5,957

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Corphita

USA . 2,392 parts In-Stock

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2,392

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Corohmni

South Africa . 242 parts In-Stock

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242

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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206

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Overview

Unlock the potential of your electronic projects with the CPH5518 by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi ensures top-notch quality and reliability in every component. Whether you need NPN or PNP polarity, this surface-mount transistor is a versatile solution for a wide range of applications. With a maximum power dissipation of 1.2W and a minimum DC current gain of 200, the CPH5518 offers exceptional performance in a compact package. Trust Onsemi to deliver value, benefits, and advantages that exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

This product offers both NPN and PNP options, providing versatility for different circuit designs.

Surface Mount: YES

Ease of installation and space-saving design with surface mount capability.

Maximum Power Dissipation (Abs): 1.2 W

Capable of handling higher power dissipation, making it suitable for various applications.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures reliable and efficient signal amplification.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, increasing the product's reliability in different environments.

Maximum Collector Current (IC): 1 A

Capable of handling higher collector currents, making it suitable for applications requiring moderate current levels.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5518 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Minimum DC Current Gain (hFE):

200

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

CPH5518 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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