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CPH5541

Onsemi

CPH5541 by Onsemi

CPH5541 by Onsemi is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.6W, it offers a min hFE of 200 and can handle up to 0.7A collector current. Ideal for applications requiring surface mount technology, operating at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,261 parts In-Stock

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Vyrian

USA . 1,084 parts In-Stock

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1,084

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Distributors (Availability)

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Native Components

USA . 280 parts In-Stock

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$0.200

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$0.192

280

$0.200

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$0.192

Northwest PG Solutions

USA . 2,100 parts In-Stock

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$0.220

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$0.194

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$0.220

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$0.194

Problanco Electronics

Mexico . 7,356 parts In-Stock

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7,356

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Kulean Microsystems

USA . 6,208 parts In-Stock

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6,208

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TANS Electronics

Latvia . 5,607 parts In-Stock

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5,607

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SupplyDigital Components

Austria . 2,146 parts In-Stock

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Corphita

USA . 702 parts In-Stock

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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Corohmni

South Africa . 56 parts In-Stock

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Overview

Enhance your electronic projects with the CPH5541 by Onsemi. Manufactured by a trusted name in the industry, this small signal bipolar junction transistor offers superior performance and reliability. Suitable for both NPN and PNP applications, this surface-mount device boasts a maximum power dissipation of 0.6W and a minimum DC current gain of 200. With a maximum collector current of 0.7A and an operating temperature of 150 °C, the CPH5541 is perfect for a wide range of applications. Experience the quality and value that Onsemi brings to the table with this versatile component.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options provides flexibility for different circuit designs and applications.

Surface Mount: YES

Surface mount capability allows for easy integration into compact electronic devices and PCB layouts.

Maximum Power Dissipation (Abs): 0.6 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures consistent and reliable amplification in various circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector Current (IC): 0.7 A

The high maximum collector current allows this transistor to handle moderate current loads, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5541 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

200

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

CPH5541 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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