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CPH5518-TL-H

Onsemi

CPH5518-TL-H by Onsemi

CPH5518-TL-H by Onsemi is a Small Signal BJT with NPN and PNP channels. It has a max power dissipation of 1.2W, min hFE of 200, and max IC of 1A. Ideal for applications requiring surface mount technology in high-temp environments up to 150°C.

Median Price

$0.207

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,000 parts In-Stock

1+ parts

$0.214

100+ parts

$0.184

1k+ parts

$0.176

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3,000

$0.214

$0.184

$0.176

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Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

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36,000

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Rochester

USA . 650 parts In-Stock

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$0.207

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$0.172

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$0.153

650

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$0.207

$0.172

$0.153

Mouser Electronics

USA . 252 parts In-Stock

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$0.185

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$0.185

Distributors (In-Stock)

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Digiode

USA . 449 parts In-Stock

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$0.169

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449

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Vyrian

USA . 2,123 parts In-Stock

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$0.178

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Flip Electronics

USA . 36,000 parts In-Stock

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36,000

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Chip Stock

USA . 34,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,698 parts In-Stock

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$0.160

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1,698

$0.160

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Corohmni

South Africa . 213 parts In-Stock

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$0.178

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213

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 7,504 parts In-Stock

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SupplyDigital Components

Austria . 6,517 parts In-Stock

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Problanco Electronics

Mexico . 4,680 parts In-Stock

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4,680

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TANS Electronics

Latvia . 4,432 parts In-Stock

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Native Components

USA . 796 parts In-Stock

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Northwest PG Solutions

USA . 600 parts In-Stock

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600

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UHIMA Technologies

Türkiye . 290 parts In-Stock

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290

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Overview

Enhance your electronic projects with the high-quality CPH5518-TL-H by Onsemi. With its NPN and PNP polarity options, this small signal bipolar junction transistor offers versatility and reliability for a wide range of applications. From amplifiers to switches, this surface-mount device can handle up to 1.2W of power dissipation and a maximum collector current of 1A. Trust in Onsemi's reputation for excellence and innovative technology to bring added value to your designs. Upgrade your circuits today with the CPH5518-TL-H and experience enhanced performance and efficiency like never before.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

This product offers both NPN and PNP options, providing flexibility for different circuit designs.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and labor costs.

Maximum Power Dissipation (Abs): 1.2 W

With a maximum power dissipation of 1.2 W, this product can handle high power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain of 200 ensures stable and consistent amplification in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate in harsh environments without performance degradation.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides good solderability and ensures a reliable electrical connection, enhancing the durability of the product.

Maximum Time At Peak Reflow Temperature (s): 30

This product can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper soldering and bonding, maintaining the integrity of the connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH5518-TL-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CPH5518-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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