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BCX70HE6433HTMA1

Infineon Technologies

BCX70HE6433HTMA1 by Infineon Technologies

Infineon BCX70HE6433HTMA1 is a NPN BJT transistor with hFE of 70, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.178

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

EBV Elektronik

Germany . 40,000 parts In-Stock

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NAC Semi

USA . 40,000 parts In-Stock

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$0.178

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$0.178

Vyrian

USA . 12,252 parts In-Stock

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Digiode

USA . 582 parts In-Stock

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Nova Conductors

Japan . 55 parts In-Stock

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VNN

France . 30 parts In-Stock

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Modulus Dynamics

Lithuania . 12,020 parts In-Stock

1+ parts

$1.601

100+ parts

$1.537

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$1.473

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-

12,020

$1.601

$1.537

$1.473

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AZTECH Wire

Italy . 762 parts In-Stock

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$15.224

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762

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Ampacity Inc.

Singapore . 602 parts In-Stock

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$20.050

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Perfect Parts

USA . 11,200 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Argo Parts USA

USA . 4,550 parts In-Stock

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Continental Prestige Electronics

USA . 4,478 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,337 parts In-Stock

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Corphita

USA . 322 parts In-Stock

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322

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Upgrade your electronics with the BCX70HE6433HTMA1 by Infineon Technologies, a top-quality Small Signal Bipolar Junction Transistor that guarantees reliability and efficiency. Manufactured by Infineon Technologies, a trusted name in the industry, this NPN transistor is perfect for switching applications. With a high DC current gain and maximum collector-emitter voltage of 45V, this transistor offers exceptional performance. Say goodbye to downtime and hello to seamless operation with the BCX70HE6433HTMA1 - the perfect choice for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, making it versatile for various applications.

Configuration: SINGLE

Simplified design with single configuration for easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for fast switching applications, ensuring quick response times.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Space-saving design for compact circuit layouts.

Terminal Form: GULL WING

Easier for automated soldering processes, improving efficiency in production.

No. of Terminals: 3

Simplified connection requirements with only 3 terminals, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact form factor for applications with limited space.

Minimum DC Current Gain (hFE): 70

Consistent and reliable amplification performance.

Maximum Collector-Emitter Voltage: 45 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

High-quality material for reliable transistor performance.

Maximum Collector Current (IC): 0.1 A

Adequate current capacity for small signal applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: DUAL

Provides flexibility in circuit layout and connections.

Maximum Time At Peak Reflow Temperature (s): 40

Optimized for reflow soldering processes with controlled heating times.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes and high-temperature requirements.

Nominal Transition Frequency (fT): 250 MHz

High frequency capability for demanding signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX70HE6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX70HE6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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