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2SA608NF-NPA-AT

Onsemi

2SA608NF-NPA-AT by Onsemi

The Onsemi 2SA608NF-NPA-AT is a PNP BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and max IC of 0.15A. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,401,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

1,401,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 1,401,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.070

1,401,000

-

-

-

$0.070

Verical

USA . 1,401,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.049

1,401,000

-

-

-

$0.049

Distributors (In-Stock)

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Digiode

USA . 2,092 parts In-Stock

1+ parts

$0.041

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-

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2,092

$0.041

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Chip Stock

USA . 67,000 parts In-Stock

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67,000

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Vyrian

USA . 10,489 parts In-Stock

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10,489

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Distributors (Availability)

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Corphita

USA . 825 parts In-Stock

1+ parts

$0.039

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-

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825

$0.039

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Corohmni

South Africa . 66 parts In-Stock

1+ parts

$0.043

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66

$0.043

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Northwest PG Solutions

USA . 460 parts In-Stock

1+ parts

$2.563

100+ parts

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460

$2.563

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AZTECH Wire

Italy . 815 parts In-Stock

1+ parts

$9.210

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815

$9.210

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Continental Prestige Electronics

USA . 1,401,000 parts In-Stock

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$0.039

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1,401,000

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$0.039

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QUARKTWIN TECHNOLOGY LTD

USA . 12,632 parts In-Stock

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12,632

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Problanco Electronics

Mexico . 6,930 parts In-Stock

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6,930

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SupplyDigital Components

Austria . 5,161 parts In-Stock

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Kepictronics

USA . 3,311 parts In-Stock

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Kulean Microsystems

USA . 2,219 parts In-Stock

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2,219

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TANS Electronics

Latvia . 2,056 parts In-Stock

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2,056

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Native Components

USA . 957 parts In-Stock

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$2.260

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957

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$2.260

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UHIMA Technologies

Türkiye . 450 parts In-Stock

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450

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Overview

Enhance your amplifier applications with the 2SA608NF-NPA-AT by Onsemi, a top-quality PNP transistor that offers superior performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this small signal bipolar junction transistor is designed to deliver exceptional amplification results. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 200 MHz, this transistor ensures high-quality sound output while maintaining efficiency. Upgrade your audio systems with the 2SA608NF-NPA-AT and experience enhanced clarity and precision in your amplification projects.

Feature Benefit Bullets

Package body material: PLASTIC/EPOXY

The plastic/epoxy package material offers durability and protection for the transistor, ensuring it can withstand various environmental conditions without damage.

Polarity or channel type: PNP

PNP transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and makes it easier to integrate this transistor into electronic devices.

Transistor application: AMPLIFIER

Designed for amplifier applications, this transistor is optimized for providing signal amplification with high fidelity.

Package shape: ROUND

The round package shape allows for easy placement and soldering onto circuit boards, making it convenient for assembly.

Terminal form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, ensuring reliable performance in electronic circuits.

No. of terminals: 3

The 3 terminals provide the necessary connections for the transistor to function effectively in a circuit.

Minimum DC current gain (hFE): 160

A high minimum DC current gain of 160 ensures stable and consistent amplification of signals in electronic circuits.

Maximum collector-emitter voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle higher voltage levels in electronic circuits.

Transistor element material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic applications, making this transistor a dependable choice.

Maximum collector current (IC): 0.15 A

Capable of handling a maximum collector current of 0.15A, this transistor is suitable for low to medium power applications.

Terminal finish: Tin (Sn)

The tin terminal finish provides corrosion resistance and ensures good solderability for secure connections in electronic circuits.

Terminal position: BOTTOM

The bottom terminal position simplifies the mounting process and ensures proper alignment in circuit board layouts.

Nominal transition frequency (fT): 200 MHz

With a high nominal transition frequency of 200MHz, this transistor is capable of fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA608NF-NPA-AT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA608NF-NPA-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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