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2SA666A

Onsemi

2SA666A by Onsemi

The Onsemi 2SA666A is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.05A. With hFE of 130, it's ideal for amplifier applications due to its high transition frequency of 80MHz and low power dissipation of 0.15W in a cylindrical package.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,802 parts In-Stock

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Vyrian

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Native Components

USA . 284 parts In-Stock

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Kulean Microsystems

USA . 7,146 parts In-Stock

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Problanco Electronics

Mexico . 7,104 parts In-Stock

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SupplyDigital Components

Austria . 4,948 parts In-Stock

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TANS Electronics

Latvia . 4,159 parts In-Stock

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Corphita

USA . 1,873 parts In-Stock

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Northwest PG Solutions

USA . 871 parts In-Stock

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Corohmni

South Africa . 382 parts In-Stock

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UHIMA Technologies

Türkiye . 84 parts In-Stock

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Overview

Enhance your electronic projects with the reliable 2SA666A by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and superior performance with their small signal bipolar junction transistor. Ideal for amplifier applications, this PNP transistor offers a seamless single configuration in a convenient round package. With a maximum power dissipation of 0.15W and a nominal transition frequency of 80 MHz, the 2SA666A guarantees optimal functionality and efficiency. Upgrade your designs with this high-quality transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this transistor suitable for various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and reliable amplification capabilities.

Maximum Power Dissipation (Abs): 0.15 W

With a high maximum power dissipation, this transistor can handle significant power levels without overheating or damage.

Minimum DC Current Gain (hFE): 130

With a minimum DC current gain of 130, this transistor provides consistent and stable amplification of current in circuits.

Maximum Operating Temperature: 125 °C

Capable of withstanding temperatures up to 125 °C, this transistor is suitable for high temperature environments or applications.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage allows this transistor to be used in circuits with higher voltage requirements.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor can handle moderate current levels in various applications.

Nominal Transition Frequency (fT): 80 MHz

The high nominal transition frequency of 80 MHz indicates that this transistor can amplify signals with high frequency response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA666A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

130

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA666A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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