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2SA666

Onsemi

2SA666 by Onsemi

The Onsemi 2SA666 is a PNP BJT transistor with max. collector-emitter voltage of 25V and max. collector current of 0.05A. With min. DC current gain of 130, it's ideal for amplifier applications with a nominal transition frequency of 80MHz. Its package style is cylindrical, made from plastic/epoxy material, and can dissipate up to 0.15W power.

Median Price

$4.170

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 174 parts In-Stock

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Vyrian

USA . 2,165 parts In-Stock

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Digiode

USA . 1,687 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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SupplyDigital Components

Austria . 5,311 parts In-Stock

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Problanco Electronics

Mexico . 3,351 parts In-Stock

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TANS Electronics

Latvia . 2,682 parts In-Stock

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Northwest PG Solutions

USA . 2,325 parts In-Stock

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Native Components

USA . 689 parts In-Stock

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UHIMA Technologies

Türkiye . 612 parts In-Stock

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Corphita

USA . 574 parts In-Stock

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Kulean Microsystems

USA . 421 parts In-Stock

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Overview

Enhance your electronic projects with the 2SA666 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor is ideal for amplifier applications, providing a seamless signal amplification experience. Its durable plastic/epoxy package and high DC current gain make it a valuable asset for any project. Experience the superior quality and efficiency of the 2SA666 by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering in electronic circuits.

Terminal Form: WIRE

Wire terminals simplify the connection process and provide a reliable electrical connection.

Maximum Power Dissipation (Abs): 0.15 W

With a high power dissipation rating, this transistor can handle more power without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design for the transistor.

Minimum DC Current Gain (hFE): 130

A high minimum DC current gain ensures stable and consistent amplification in transistor circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 25 V

The high collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency compared to other materials.

Maximum Collector Current (IC): 0.05 A

The maximum collector current rating ensures the transistor can handle high current loads without damage.

Terminal Position: BOTTOM

BOTTOM terminal position makes it easy to mount and connect the transistor in various circuits.

Nominal Transition Frequency (fT): 80 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies for signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA666 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

130

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA666 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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