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2SA673AC-E

Renesas Electronics

2SA673AC-E by Renesas Electronics

The Renesas Electronics 2SA673AC-E is a PNP BJT transistor with hFE of 100, VCE of 50V, and IC of 0.5A. It is used in amplifier applications due to its single configuration and through-hole terminals. The transistor operates at temperatures up to 150°C, making it suitable for various electronic designs.

Median Price

$0.492

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4

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1k+

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Rochester

USA . 9,540 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.395

10k+ parts

$0.352

9,540

-

$0.475

$0.395

$0.352

DigiKey

USA . 9,540 parts In-Stock

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$0.490

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9,540

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$0.490

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Verical

USA . 9,540 parts In-Stock

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$0.493

10k+ parts

$0.440

9,540

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$0.493

$0.440

Chip1Stop

Japan . 1,100 parts In-Stock

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$0.888

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$0.710

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1,100

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$0.888

$0.710

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Distributors (Availability)

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Native Components

USA . 587 parts In-Stock

1+ parts

$72.026

100+ parts

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$69.145

587

$72.026

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$69.145

Northwest PG Solutions

USA . 1,695 parts In-Stock

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$79.228

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1,695

$79.228

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QUARKTWIN TECHNOLOGY LTD

USA . 13,787 parts In-Stock

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13,787

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Assy Fe

Spain . 2,250 parts In-Stock

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2,250

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Kepictronics

USA . 2,085 parts In-Stock

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2,085

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Overview

Unleash the power of amplification with the Renesas Electronics 2SA673AC-E Small Signal Bipolar Junction Transistor. Renowned for their high-quality products, Renesas Electronics delivers unmatched performance and reliability. Ideal for amplifier applications, this PNP transistor offers a minimum DC current gain of 100 and a maximum collector-emitter voltage of 50V. With a maximum operating temperature of 150°C, this transistor is designed to excel in demanding environments. Trust Renesas Electronics for superior quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easier to implement in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Compact round package shape makes it easy to mount and integrate into circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and reliable connections for stable performance in circuits.

No. of Terminals: 3

With 3 terminals, this transistor is versatile and can be easily integrated into various circuit designs.

Minimum DC Current Gain (hFE): 100

High DC current gain of 100 ensures effective amplification of signals in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand high temperatures during operation.

Maximum Collector-Emitter Voltage: 50 V

Capable of handling a maximum collector-emitter voltage of 50V, suitable for various amplifier applications.

Transistor Element Material: SILICON

Silicon material ensures reliable and stable performance of the transistor in different operating conditions.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum collector current of 0.5A, making it suitable for low to medium power applications.

Terminal Finish: TIN COPPER

Tin copper terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to solder and mount the transistor onto circuit boards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA673AC-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SA673AC-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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