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2SA608NG-NPA-AT

Onsemi

2SA608NG-NPA-AT by Onsemi

Onsemi's 2SA608NG-NPA-AT is a PNP BJT transistor with hFE of 280, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and through-hole terminals in a cylindrical package style.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 144,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

144,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 144,000 parts In-Stock

1+ parts

-

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$0.070

144,000

-

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-

$0.070

Verical

USA . 139,500 parts In-Stock

1+ parts

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$0.049

139,500

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-

$0.049

Distributors (In-Stock)

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Vyrian

USA . 1,491 parts In-Stock

1+ parts

$0.040

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-

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1,491

$0.040

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Digiode

USA . 406 parts In-Stock

1+ parts

$0.041

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406

$0.041

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DigiKey Marketplace

USA . 22,500 parts In-Stock

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22,500

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Chip Stock

USA . 6,000 parts In-Stock

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6,000

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Connector Distribution Corp

USA . 1,500 parts In-Stock

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1,500

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Right Parts Inc.

USA . 1,500 parts In-Stock

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1,500

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Distributors (Availability)

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Corphita

USA . 2,471 parts In-Stock

1+ parts

$0.039

100+ parts

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2,471

$0.039

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Corohmni

South Africa . 444 parts In-Stock

1+ parts

$0.040

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444

$0.040

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Continental Prestige Electronics

USA . 144,000 parts In-Stock

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$0.040

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144,000

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$0.040

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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36,800

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QUARKTWIN TECHNOLOGY LTD

USA . 16,678 parts In-Stock

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16,678

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Kulean Microsystems

USA . 5,376 parts In-Stock

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5,376

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Perfect Parts

USA . 4,375 parts In-Stock

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4,375

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Northwest PG Solutions

USA . 1,991 parts In-Stock

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$4.479

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1,991

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$4.479

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SupplyDigital Components

Austria . 1,875 parts In-Stock

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1,875

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Problanco Electronics

Mexico . 1,501 parts In-Stock

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1,501

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Native Components

USA . 968 parts In-Stock

1+ parts

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$4.433

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968

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$4.433

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UHIMA Technologies

Türkiye . 741 parts In-Stock

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741

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TANS Electronics

Latvia . 656 parts In-Stock

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656

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Overview

Elevate your amplifier designs with the 2SA608NG-NPA-AT by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for a wide range of applications. With a high DC current gain and maximum collector-emitter voltage, this PNP transistor provides superior performance and reliability. Trust Onsemi to provide you with products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

Suitable for amplification of positive signals, commonly used in audio and signal processing applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring high performance in signal amplification tasks.

Package Shape: ROUND

Space-saving design that allows for compact integration into circuit boards.

Terminal Form: THROUGH-HOLE

Easy to mount and solder onto circuit boards, making installation and assembly convenient.

No. of Terminals: 3

Simplifies connections and reduces complexity in circuit layout.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltages, suitable for a wide range of applications.

Nominal Transition Frequency (fT): 200 MHz

Capable of high-frequency signal amplification, making it ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA608NG-NPA-AT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

280

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA608NG-NPA-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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