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ZTX651QSTZ

Diodes Incorporated

ZTX651QSTZ by Diodes Incorporated

ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.

Median Price

$1.247

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 361 parts In-Stock

1+ parts

$1.247

100+ parts

$1.185

1k+ parts

$1.185

10k+ parts

-

361

$1.247

$1.185

$1.185

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 81 parts In-Stock

1+ parts

$0.455

100+ parts

-

1k+ parts

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81

$0.455

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Vyrian

USA . 6,403 parts In-Stock

1+ parts

-

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6,403

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.446

100+ parts

-

1k+ parts

$0.428

10k+ parts

-

2,000

$0.446

-

$0.428

-

Corohmni

South Africa . 176 parts In-Stock

1+ parts

$0.652

100+ parts

-

1k+ parts

-

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176

$0.652

-

-

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Semicontronic

India . 361 parts In-Stock

1+ parts

$1.060

100+ parts

$1.034

1k+ parts

$1.028

10k+ parts

-

361

$1.060

$1.034

$1.028

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Ampacity Inc.

Singapore . 99 parts In-Stock

1+ parts

$1.060

100+ parts

-

1k+ parts

-

10k+ parts

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99

$1.060

-

-

-

Advanced Electronics

New Zealand . 361 parts In-Stock

1+ parts

$1.247

100+ parts

$1.185

1k+ parts

$1.185

10k+ parts

-

361

$1.247

$1.185

$1.185

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Aztec Data Supply Inc.

USA . 3,456 parts In-Stock

1+ parts

$1.398

100+ parts

-

1k+ parts

-

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3,456

$1.398

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AZTECH Wire

Italy . 233 parts In-Stock

1+ parts

$19.535

100+ parts

-

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233

$19.535

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Continental Prestige Electronics

USA . 5,619 parts In-Stock

1+ parts

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100+ parts

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5,619

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Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

$0.472

1k+ parts

$0.472

10k+ parts

$0.472

950

-

$0.472

$0.472

$0.472

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$0.472

1k+ parts

$0.472

10k+ parts

$0.472

950

-

$0.472

$0.472

$0.472

Argo Parts USA

USA . 41 parts In-Stock

1+ parts

-

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41

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Overview

Enhance your electronic projects with the ZTX651QSTZ by Diodes Incorporated. Designed with precision and quality in mind, this NPN Bipolar Junction Transistor offers reliability and performance like no other. Ideal for small signal applications, this transistor delivers a perfect balance of power dissipation and collector current. Unleash the full potential of your designs with the ZTX651QSTZ and experience unparalleled efficiency and effectiveness in your circuits. Join the countless satisfied customers who have benefited from Diodes Incorporated's commitment to excellence.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used due to their low cost, ease of use, and high efficiency, making this product a good choice for general applications.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures that the transistor provides sufficient amplification, making it a reliable choice for signal amplification circuits.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures, making it suitable for applications that require stable performance in harsh environments.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2A allows the transistor to handle high current loads, making it a versatile choice for various circuit designs.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Nominal Transition Frequency (fT): 140 MHz

With a nominal transition frequency of 140MHz, this transistor is capable of operating at high frequencies, making it suitable for RF and high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX651QSTZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

ZTX651QSTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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