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ZTX653STOB

Diodes Incorporated

ZTX653STOB by Diodes Incorporated

ZTX653STOB by Diodes Inc. is a NPN BJT transistor with 25 min hFE and 100V max VCE. Ideal for switching applications, it has a max IC of 2A and fT of 140MHz. Its PLASTIC/EPOXY package with WIRE terminals makes it suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,573 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Corohmni

South Africa . 887 parts In-Stock

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$1.245

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887

$1.245

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Aztec Data Supply Inc.

USA . 346 parts In-Stock

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$1.590

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346

$1.590

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.709

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$1.623

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$1.623

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3,000

$1.709

$1.623

$1.623

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AZTECH Wire

Italy . 398 parts In-Stock

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$19.707

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398

$19.707

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Semicontronic

India . 670 parts In-Stock

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$56.050

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$54.649

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$54.368

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670

$56.050

$54.649

$54.368

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Perfect Parts

USA . 8,960 parts In-Stock

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Argo Parts USA

USA . 2,175 parts In-Stock

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Continental Prestige Electronics

USA . 2,053 parts In-Stock

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Modulus Dynamics

Lithuania . 700 parts In-Stock

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700

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Enhance your electronic projects with the ZTX653STOB by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers quality products that exceed expectations. The ZTX653STOB falls under the category of Small Signal Bipolar Junction Transistors, perfect for switching applications. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 140MHz, this NPN transistor offers reliability and efficiency. Trust Diodes Incorporated to provide innovative solutions for your circuit needs. Elevate your designs with the ZTX653STOB today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easier integration with other components in a circuit, making this transistor versatile and compatible.

Configuration: SINGLE

With a single configuration, this transistor is easy to work with and ideal for simple switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in tight spaces.

Terminal Form: WIRE

The wire terminals offer a secure connection and flexibility for various wiring configurations.

No. of Terminals: 3

With 3 terminals, this transistor is straightforward to connect and install in a circuit.

Package Style (Meter): IN-LINE

The in-line package style is space-saving and convenient for applications where vertical space is limited.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain ensures consistent and reliable performance in a variety of operating conditions.

Maximum Collector-Emitter Voltage: 100 V

The high maximum voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures excellent performance and reliability.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle high current loads without issues.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a secure connection and prevents corrosion for long-lasting performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper alignment in a circuit.

Reference Standard: CECC

Compliant with the CECC reference standard, this transistor meets high-quality and performance expectations.

Nominal Transition Frequency (fT): 140 MHz

With a high nominal transition frequency, this transistor offers fast switching speeds and reliable operation in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX653STOB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX653STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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