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ZTX653STOA

Diodes Incorporated

ZTX653STOA by Diodes Incorporated

ZTX653STOA by Diodes Inc. is a NPN BJT transistor with hFE of 25, VCE of 100V, and IC of 2A. Ideal for switching applications due to its high transition frequency of 140MHz. Comes in an IN-LINE package style with matte tin finish, suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Vyrian

USA . 195 parts In-Stock

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195

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,010 parts In-Stock

1+ parts

$0.450

100+ parts

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1,010

$0.450

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$1.273

100+ parts

$1.209

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$1.209

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200

$1.273

$1.209

$1.209

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Corohmni

South Africa . 292 parts In-Stock

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$1.464

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292

$1.464

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AZTECH Wire

Italy . 313 parts In-Stock

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$17.766

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313

$17.766

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Semicontronic

India . 282 parts In-Stock

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$30.050

100+ parts

$29.299

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$29.148

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282

$30.050

$29.299

$29.148

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Argo Parts USA

USA . 2,996 parts In-Stock

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Continental Prestige Electronics

USA . 1,385 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Modulus Dynamics

Lithuania . 650 parts In-Stock

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650

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your electronic projects with the ZTX653STOA by Diodes Incorporated. This high-quality Small Signal Bipolar Junction Transistor offers exceptional performance for switching applications. With a maximum collector-emitter voltage of 100V and a transistor element material made of silicon, this NPN transistor is ideal for a wide range of projects. Trust in Diodes Incorporated's reputation for excellence in manufacturing to deliver a reliable and efficient product that will add value to your designs. Experience the benefits of the ZTX653STOA and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration into circuits requiring NPN transistors, enhancing versatility.

Configuration: SINGLE

Simplifies circuit design and installation, ideal for projects requiring a single transistor.

Transistor Application: SWITCHING

Perfect for applications that require fast switching speeds and high efficiency.

Package Shape: RECTANGULAR

Offers a convenient form factor for easy mounting and placement within a circuit.

Terminal Form: WIRE

Facilitates secure connections and ensures reliable performance in various electronic devices.

No. of Terminals: 3

Provides flexibility for connection options while maintaining a compact design.

Package Style (Meter): IN-LINE

Allows for easy installation and compatibility with standard PCB layouts.

Minimum DC Current Gain (hFE): 25

Ensures consistent and predictable amplification of signals in the circuit.

Maximum Collector-Emitter Voltage: 100 V

Withstands high voltage conditions, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 2 A

Capable of handling high current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures stable electrical connections.

Terminal Position: SINGLE

Simplifies circuit layout and connections, improving overall design efficiency.

Reference Standard: CECC

Complies with industry standards, ensuring quality and performance consistency.

Nominal Transition Frequency (fT): 140 MHz

Enables high-frequency applications with fast response times and minimal signal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX653STOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX653STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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