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ZTX651STOA

Diodes Incorporated

ZTX651STOA by Diodes Incorporated

ZTX651STOA by Diodes Inc. is a NPN BJT transistor with hFE of 40, VCE of 60V, and IC of 2A. Ideal for switching applications due to its high transition frequency of 140MHz. Packaged in plastic/epoxy with single configuration and wire terminals, meeting CECC standards.

Median Price

$0.423

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 270 parts In-Stock

1+ parts

$0.423

100+ parts

$0.402

1k+ parts

$0.402

10k+ parts

-

270

$0.423

$0.402

$0.402

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 270 parts In-Stock

1+ parts

-

100+ parts

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270

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 270 parts In-Stock

1+ parts

$0.360

100+ parts

$0.351

1k+ parts

$0.349

10k+ parts

-

270

$0.360

$0.351

$0.349

-

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.423

100+ parts

$0.402

1k+ parts

$0.402

10k+ parts

-

270

$0.423

$0.402

$0.402

-

Aztec Data Supply Inc.

USA . 913 parts In-Stock

1+ parts

$1.048

100+ parts

-

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-

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913

$1.048

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Corohmni

South Africa . 527 parts In-Stock

1+ parts

$1.804

100+ parts

-

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527

$1.804

-

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AZTECH Wire

Italy . 294 parts In-Stock

1+ parts

$18.051

100+ parts

-

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294

$18.051

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Component Stockers USA

USA . 570 parts In-Stock

1+ parts

$99.990

100+ parts

-

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-

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570

$99.990

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

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100+ parts

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6,000

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Ashlea Components Ltd (Excess)

UK . 4,000 parts In-Stock

1+ parts

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4,000

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Continental Prestige Electronics

USA . 3,200 parts In-Stock

1+ parts

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3,200

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Robosynatics

Brazil . 250 parts In-Stock

1+ parts

-

100+ parts

$2.140

1k+ parts

$2.140

10k+ parts

$2.140

250

-

$2.140

$2.140

$2.140

Lucentia Tech

USA . 250 parts In-Stock

1+ parts

-

100+ parts

$2.140

1k+ parts

$2.140

10k+ parts

$2.140

250

-

$2.140

$2.140

$2.140

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

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100

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Argo Parts USA

USA . 10 parts In-Stock

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10

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Overview

Enhance your electronic projects with the ZTX651STOA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This small signal bipolar junction transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a nominal transition frequency of 140 MHz. With a minimum DC current gain of 40 and a maximum collector current of 2A, the ZTX651STOA delivers exceptional performance. Trust in Diodes Incorporated to provide you with high-quality components that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, making this product versatile and compatible in different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes installation easier, ideal for applications where space is limited.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers efficient and fast switching capabilities, making it a reliable choice for various electronic projects.

Package Shape: RECTANGULAR

Rectangular package shape provides easy mounting and alignment in circuit boards, ensuring a secure and stable connection.

Terminal Form: WIRE

Wire terminals offer flexibility in connection options and make it convenient to integrate the transistor into different circuit layouts.

No. of Terminals: 3

Having 3 terminals allows for proper connection and ensures compatibility with standard circuit configurations, making it easy to integrate into existing designs.

Package Style (Meter): IN-LINE

In-line package style facilitates neat and organized circuit layouts, making it easier to manage connections and reduce the risk of short circuits.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures stable and reliable amplification capabilities, making this transistor suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle high voltage applications, offering versatility and reliability in various circuit designs.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high performance and reliability, ensuring the transistor operates efficiently in different conditions.

Maximum Collector Current (IC): 2 A

The maximum collector current of 2A allows for handling higher currents, making this transistor suitable for applications that require power switching and amplification.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides corrosion resistance and ensures secure solder connections, enhancing the durability and longevity of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, ensuring proper alignment and reducing the risk of errors during assembly.

Reference Standard: CECC

Compliance with CECC standards ensures the quality and performance of the transistor, meeting industry requirements for reliability and safety.

Nominal Transition Frequency (fT): 140 MHz

A high nominal transition frequency of 140MHz indicates fast response and high-speed performance, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX651STOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX651STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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