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ZTX651M1TC

Diodes Incorporated

ZTX651M1TC by Diodes Incorporated

ZTX651M1TC by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 60V, max. collector current of 2A, and min. DC current gain of 40 (hFE). Ideal for switching applications, it has a nominal transition frequency of 140MHz and comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$1.803

Lifecycle Status

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4

In-Stock Inventory

1k+

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Adafruit Industries

USA . 22 parts In-Stock

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$1.803

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$1.712

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$1.712

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Sinequanon

UK . 15,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Vyrian

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Corohmni

South Africa . 901 parts In-Stock

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$1.062

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901

$1.062

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Aztec Data Supply Inc.

USA . 3,053 parts In-Stock

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$1.106

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Advanced Electronics

New Zealand . 22 parts In-Stock

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$1.802

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$1.712

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$1.712

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22

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AZTECH Wire

Italy . 228 parts In-Stock

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$10.940

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Argo Parts USA

USA . 4,860 parts In-Stock

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Continental Prestige Electronics

USA . 1,599 parts In-Stock

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Bastille Electronics

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Robosynatics

Brazil . 150 parts In-Stock

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$0.242

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Lucentia Tech

USA . 150 parts In-Stock

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$0.242

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Overview

Experience the reliability and performance of Diodes Incorporated with the ZTX651M1TC Small Signal Bipolar Junction Transistor. This NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 2A. With a minimum DC current gain of 40 and a nominal transition frequency of 140MHz, this transistor provides exceptional quality and value. Trust in Diodes Incorporated for top-notch products that deliver superior results in various electronic applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into circuits and ensures compatibility with other NPN components.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to use in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in these scenarios.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on PCBs, saving space and improving assembly efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and allows for easy soldering during assembly.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and is ideal for basic circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides consistent amplification in various applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V makes this transistor suitable for applications requiring higher voltage handling.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability in operation.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle moderate current loads in various circuit applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and reduces the likelihood of errors during installation.

Reference Standard: CECC

Conforming to CECC standards ensures the quality and reliability of this transistor in demanding applications.

Nominal Transition Frequency (fT): 140 MHz

With a nominal transition frequency of 140 MHz, this transistor is capable of high-speed switching operations in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX651M1TC attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX651M1TC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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