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ZTX651STOB

Diodes Incorporated

ZTX651STOB by Diodes Incorporated

ZTX651STOB by Diodes Inc. is a NPN small signal BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 2A. It is commonly used for switching applications with a min DC current gain of 40 (hFE) and a nominal transition frequency of 140MHz.

Median Price

$1.390

Lifecycle Status

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3

In-Stock Inventory

< 1k

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Adafruit Industries

USA . 270 parts In-Stock

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$1.390

100+ parts

$1.321

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$1.321

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270

$1.390

$1.321

$1.321

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Vyrian

USA . 246 parts In-Stock

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246

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Semicontronic

India . 197 parts In-Stock

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$1.180

100+ parts

$1.150

1k+ parts

$1.145

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197

$1.180

$1.150

$1.145

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.390

100+ parts

$1.321

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$1.321

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270

$1.390

$1.321

$1.321

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Aztec Data Supply Inc.

USA . 114 parts In-Stock

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$1.687

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114

$1.687

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Corohmni

South Africa . 34 parts In-Stock

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$1.902

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34

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AZTECH Wire

Italy . 429 parts In-Stock

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$12.992

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Argo Parts USA

USA . 4,560 parts In-Stock

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Continental Prestige Electronics

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Robosynatics

Brazil . 950 parts In-Stock

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$2.715

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$2.715

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950

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$2.715

$2.715

Lucentia Tech

USA . 950 parts In-Stock

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$2.715

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$2.715

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$2.715

950

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$2.715

$2.715

Bastille Electronics

Australia . 18 parts In-Stock

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Overview

Discover the power and precision of the ZTX651STOB by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you the highest quality small signal bipolar junction transistors (BJT) on the market. With its NPN polarity and single configuration, this transistor is perfect for switching applications. The ZTX651STOB's rectangular package shape and wire terminal form make it easy to install and use. Offering a maximum collector-emitter voltage of 60V and a maximum collector current of 2A, this transistor provides exceptional performance and reliability. Trust Diodes Incorporated to deliver the value, benefits, and advantages that only the ZTX651STOB can offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy control and amplification of signals, making it ideal for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easy mounting and integration into circuit boards.

Terminal Form: WIRE

The wire terminals facilitate quick and easy connectivity, saving time during installation.

No. of Elements: 1

With a single element, this transistor provides a straightforward and reliable solution.

No. of Terminals: 3

The three terminals offer versatility in circuit connections and enhance integration capabilities.

Package Style (Meter): IN-LINE

The in-line package style allows for efficient space utilization, making it suitable for compact applications.

Minimum DC Current Gain (hFE): 40

This high minimum DC current gain ensures signal amplification and stability in various operating conditions.

Maximum Collector-Emitter Voltage: 60 V

With a maximum voltage rating of 60V, this transistor can handle higher power applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability and performance.

Maximum Collector Current (IC): 2 A

The maximum collector current rating of 2A enables handling of higher current requirements.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides excellent solderability and reliability in circuit connections.

Terminal Position: SINGLE

The single terminal position simplifies PCB layout and reduces complexity in circuit design.

Reference Standard: CECC

Designed and manufactured according to the CECC standard, ensuring adherence to quality and reliability requirements.

Nominal Transition Frequency (fT): 140 MHz

This high transition frequency allows for accurate and efficient signal processing, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX651STOB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX651STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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