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BC549CB1G

Taiwan Semiconductor

BC549CB1G by Taiwan Semiconductor

BC549CB1G by Taiwan Semiconductor is a NPN BJT transistor with max. power dissipation of 0.5W, hFE of 420, and VCE of 30V. Ideal for switching applications due to its single configuration and through-hole terminal form in a cylindrical package style. Operating temp ranges from -65°C to 150°C making it suitable for various electronic devices.

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$0.042

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Nova Conductors

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Continental Prestige Electronics

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Overview

Experience the exceptional quality and reliability of the BC549CB1G NPN transistor from Taiwan Semiconductor. Perfect for switching applications, this small signal BJT offers unparalleled performance and efficiency. With a minimum DC current gain of 420 and a maximum collector-emitter voltage of 30V, this transistor is a top choice for a wide range of electronic projects. Trust in Taiwan Semiconductor's expertise and innovation to deliver a product that exceeds expectations. Elevate your designs with the BC549CB1G and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and allows for easy handling and installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making them versatile and widely applicable.

Configuration: SINGLE

Single configuration simplifies circuit design and makes installation easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in tasks requiring rapid on/off switching.

Package Shape: ROUND

Round package shape allows for compact and efficient board layout, saving space in the overall design.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and are commonly used in applications where reliability is important.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers good thermal performance and mechanical robustness.

Maximum Power Dissipation Ambient: 0.5 W

Even in ambient conditions, the transistor can dissipate up to 0.5W of power safely.

Minimum DC Current Gain (hFE): 420

A high DC current gain of 420 ensures efficient amplification of input signals in various applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures up to 150°C, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle moderate voltage levels in circuit applications.

Transistor Element Material: SILICON

Silicon material is commonly used in transistors for its reliability and consistent performance characteristics.

Minimum Operating Temperature: -65 °C

Can operate at low temperatures as low as -65°C, suitable for applications in extreme environments.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels in various circuit applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and ensures consistent mounting orientation.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for up to 10 seconds, suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can undergo standard reflow soldering processes without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC549CB1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Taiwan Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BC549CB1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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