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2SA2205-E

Onsemi

2SA2205-E by Onsemi

The Onsemi 2SA2205-E is a PNP BJT transistor with hFE of 200, VCE of 100V, and IC of 2A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and through-hole terminals make it suitable for high-frequency (300MHz) in-line package designs.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 300 parts In-Stock

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$0.310

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$0.300

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$0.300

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300

$0.310

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Vyrian

USA . 8,445 parts In-Stock

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Digiode

USA . 1,189 parts In-Stock

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Native Components

USA . 523 parts In-Stock

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$0.212

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$0.204

523

$0.212

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$0.204

Northwest PG Solutions

USA . 726 parts In-Stock

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$0.234

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$0.206

726

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$0.206

Corohmni

South Africa . 529 parts In-Stock

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$1.350

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529

$1.350

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AZTECH Wire

Italy . 137 parts In-Stock

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$8.840

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QUARKTWIN TECHNOLOGY LTD

USA . 26,312 parts In-Stock

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Kulean Microsystems

USA . 4,147 parts In-Stock

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Corphita

USA . 1,971 parts In-Stock

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SupplyDigital Components

Austria . 1,295 parts In-Stock

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TANS Electronics

Latvia . 1,257 parts In-Stock

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UHIMA Technologies

Türkiye . 698 parts In-Stock

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698

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Problanco Electronics

Mexico . 424 parts In-Stock

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Microchip USA

USA . 373 parts In-Stock

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Overview

Enhance your electronic projects with the 2SA2205-E by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for switching applications. Its compact design and efficient operation make it ideal for a wide range of electronic devices. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 300 MHz, this transistor provides exceptional value and functionality for your projects. Upgrade your circuits with the 2SA2205-E and experience seamless performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easier integration with other PNP components in a circuit, enhancing compatibility and performance.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to handle and troubleshoot.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand heat and operate reliably in various industrial and electronic applications.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage of 100V allows for use in circuits with higher voltage requirements, expanding its application range.

Maximum Collector Current (IC): 2 A

The maximum collector current of 2A enables the transistor to handle higher current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 300 MHz

With a high nominal transition frequency of 300MHz, this transistor is capable of operating at high frequencies, ideal for RF and other high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2205-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2205-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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