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2SA2112-AN

Onsemi

2SA2112-AN by Onsemi

The Onsemi 2SA2112-AN is a PNP BJT with max power dissipation of 1W, hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability. Operating temp up to 150 °C makes it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,281 parts In-Stock

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Digiode

USA . 133 parts In-Stock

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Native Components

USA . 884 parts In-Stock

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$52.220

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$50.131

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$50.131

Northwest PG Solutions

USA . 1,289 parts In-Stock

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$57.442

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QUARKTWIN TECHNOLOGY LTD

USA . 15,803 parts In-Stock

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TANS Electronics

Latvia . 6,687 parts In-Stock

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Problanco Electronics

Mexico . 6,140 parts In-Stock

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CPlus Electronics

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,941 parts In-Stock

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Corphita

USA . 2,455 parts In-Stock

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Perfect Parts

USA . 2,436 parts In-Stock

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UHIMA Technologies

Türkiye . 579 parts In-Stock

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Corohmni

South Africa . 230 parts In-Stock

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SupplyDigital Components

Austria . 187 parts In-Stock

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Overview

Discover the power of innovation with the 2SA2112-AN PNP transistor by Onsemi. Known for their high-quality components, Onsemi delivers unparalleled performance and reliability in the field of Small Signal Bipolar Junction Transistors. This versatile component is perfect for a wide range of applications, offering customers exceptional value and efficiency. From amplifiers to switching circuits, the 2SA2112-AN provides the perfect solution for all your electronic needs. Experience the difference with Onsemi today!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications, making this product suitable for small signal amplification and switching.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing production costs.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels without overheating, increasing its reliability.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures consistent and reliable amplification of small signals in a variety of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows this transistor to handle higher current loads, making it versatile for a wide range of applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple terminal finish options provides flexibility in manufacturing and ensures good electrical contact for reliable performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2112-AN attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

2SA2112-AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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