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2SA2039

Onsemi

2SA2039 by Onsemi

2SA2039 by Onsemi is a PNP BJT transistor with hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications, it operates up to 150 °C with fT of 360MHz in a plastic/epoxy package suitable for through-hole mounting.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 983 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 8,072 parts In-Stock

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Problanco Electronics

Mexico . 7,519 parts In-Stock

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Kulean Microsystems

USA . 6,645 parts In-Stock

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TANS Electronics

Latvia . 1,156 parts In-Stock

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Discover the unparalleled quality and reliability of the 2SA2039 by Onsemi, a leading manufacturer in the industry. Ideal for switching applications, this PNP bipolar junction transistor offers exceptional performance and efficiency. With a minimum DC current gain of 200 and a maximum collector-emitter voltage of 50V, this transistor is designed to exceed expectations. Trust Onsemi to deliver cutting-edge technology and innovative solutions that meet your needs. Upgrade your project with the 2SA2039 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high package durability and good thermal conductivity, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: PNP

Allows for easy integration into circuits that require PNP transistors, enhancing compatibility and flexibility.

Configuration: SINGLE

Simplified design and easy implementation in electronic circuits, making it suitable for basic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient operation.

Package Shape: RECTANGULAR

Space-saving design and easy mounting on PCBs, ideal for compact electronic devices.

Terminal Form: THROUGH-HOLE

Enables easy installation and secure connection to the PCB, facilitating soldering and assembly processes.

No. of Terminals: 3

Simplified pin configuration for basic circuit connections, making it easy to integrate into existing designs.

Package Style (Meter): IN-LINE

Streamlined package design for efficient PCB layout, improving overall circuit performance.

Minimum DC Current Gain (hFE): 200

Provides high amplification capabilities, ensuring stable and reliable signal processing in various applications.

Maximum Operating Temperature: 150 °C

Wide temperature range for versatile use in different environmental conditions, enhancing product reliability.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage rating for safe operation, protecting the transistor from overvoltage conditions.

Transistor Element Material: SILICON

High-quality material for improved performance and reliability in electronic circuits, ensuring long-term durability.

Maximum Collector Current (IC): 5 A

High current handling capability for power-efficient operation in various switching applications.

Terminal Position: SINGLE

Simplified pin layout for easy circuit integration, reducing complexity in design and assembly processes.

Case Connection: COLLECTOR

Direct connection to the collector terminal for efficient heat dissipation and improved thermal management.

Nominal Transition Frequency (fT): 360 MHz

High transition frequency for fast switching speeds, enabling rapid signal processing and response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2039 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2039 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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