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2SA2039-E

Onsemi

2SA2039-E by Onsemi

The Onsemi 2SA2039-E is a PNP BJT transistor with hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications due to its high transition frequency of 360MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

$0.762

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 323,178 parts In-Stock

1+ parts

$0.925

100+ parts

$0.566

1k+ parts

$0.466

10k+ parts

-

323,178

$0.925

$0.566

$0.466

-

Element14

Singapore . 913 parts In-Stock

1+ parts

$1.350

100+ parts

-

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-

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913

$1.350

-

-

-

Rochester

USA . 297,071 parts In-Stock

1+ parts

-

100+ parts

$0.476

1k+ parts

$0.395

10k+ parts

$0.352

297,071

-

$0.476

$0.395

$0.352

DigiKey

USA . 297,071 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.600

10k+ parts

-

297,071

-

-

$0.600

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,035 parts In-Stock

1+ parts

$0.389

100+ parts

-

1k+ parts

-

10k+ parts

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2,035

$0.389

-

-

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Vyrian

USA . 361 parts In-Stock

1+ parts

$0.409

100+ parts

-

1k+ parts

-

10k+ parts

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361

$0.409

-

-

-

Chip Stock

USA . 22,000 parts In-Stock

1+ parts

-

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22,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 457,548 parts In-Stock

1+ parts

$0.210

100+ parts

$0.210

1k+ parts

$0.360

10k+ parts

$0.360

457,548

$0.210

$0.210

$0.360

$0.360

Ampacity Inc.

Singapore . 233,307 parts In-Stock

1+ parts

$0.348

100+ parts

-

1k+ parts

-

10k+ parts

-

233,307

$0.348

-

-

-

Corphita

USA . 1,576 parts In-Stock

1+ parts

$0.368

100+ parts

-

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-

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1,576

$0.368

-

-

-

Corohmni

South Africa . 137 parts In-Stock

1+ parts

$0.409

100+ parts

-

1k+ parts

-

10k+ parts

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137

$0.409

-

-

-

Continental Prestige Electronics

USA . 913 parts In-Stock

1+ parts

$0.925

100+ parts

$0.566

1k+ parts

-

10k+ parts

-

913

$0.925

$0.566

-

-

Microchip USA

USA . 267 parts In-Stock

1+ parts

$6.045

100+ parts

-

1k+ parts

-

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267

$6.045

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Problanco Electronics

Mexico . 6,934 parts In-Stock

1+ parts

-

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6,934

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-

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Kulean Microsystems

USA . 6,687 parts In-Stock

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6,687

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SupplyDigital Components

Austria . 5,603 parts In-Stock

1+ parts

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5,603

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Perfect Parts

USA . 3,282 parts In-Stock

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3,282

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TANS Electronics

Latvia . 2,605 parts In-Stock

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2,605

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Native Components

USA . 561 parts In-Stock

1+ parts

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561

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UHIMA Technologies

Türkiye . 397 parts In-Stock

1+ parts

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397

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Northwest PG Solutions

USA . 346 parts In-Stock

1+ parts

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346

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Kepictronics

USA . 189 parts In-Stock

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189

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Overview

Unlock the power of high-quality electronics with the 2SA2039-E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors designed for switching applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 200, this PNP transistor offers reliable performance and efficiency. Whether you're working on audio amplifiers, LED drivers, or other electronic projects, the 2SA2039-E provides the value, benefits, and advantages you need to take your designs to the next level. Trust Onsemi for quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, enhancing overall robustness.

No. of Terminals: 3

Minimal number of terminals simplifies circuit connections and reduces complexity.

Package Style (Meter): IN-LINE

In-line package style saves space on circuit boards, ideal for compact designs.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures optimal amplification of signals, improving overall performance.

Maximum Collector-Emitter Voltage: 50 V

Handles up to 50 volts, suitable for a wide range of low to medium voltage applications.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance and reliability in various operating conditions.

Maximum Collector Current (IC): 5 A

Capable of handling up to 5 amps, making it suitable for medium-power applications.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and PCB layout.

Case Connection: COLLECTOR

Collector case connection simplifies mounting and improves thermal management.

Nominal Transition Frequency (fT): 360 MHz

High transition frequency allows for high-speed switching operations in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2039-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2039-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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