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2SA2142(TE16L1,NQ)

Toshiba

2SA2142(TE16L1,NQ) by Toshiba

Toshiba's 2SA2142 is a PNP BJT transistor for switching applications. With VCEsat of 1V, IC of 0.5A, and hFE of 100, it operates at up to 150°C. Housed in a small outline package with Gull Wing terminals, it has a max VCE of 600V for high-power dissipation up to 15W.

Median Price

$0.396

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$0.445

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TTI

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VNN

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QUARKTWIN TECHNOLOGY LTD

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Overview

Unleash the power of innovation with Toshiba's 2SA2142(TE16L1,NQ) Small Signal Bipolar Junction Transistor. With a maximum collector-emitter voltage of 600V and a low VCEsat of just 1V, this PNP transistor is perfect for switching applications. Its high DC current gain and impressive transition frequency ensure seamless performance. Whether you're designing cutting-edge electronics or upgrading existing systems, trust in Toshiba for quality, reliability, and value. Elevate your projects to new heights with the 2SA2142(TE16L1,NQ) and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high thermal conductivity and excellent mechanical strength, ensuring reliability and durability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by using a single transistor, reducing complexity and space requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency in such scenarios.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and facilitating automated assembly processes.

Maximum VCEsat: 1 V

Low VCEsat minimizes power loss and improves overall efficiency of the transistor.

Package Shape: RECTANGULAR

Standard rectangular shape for easy integration into various electronic circuits and layouts.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and simplify soldering during assembly.

No. of Terminals: 2

Simple two-terminal configuration for easy connectivity and integration in circuit designs.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability enables the transistor to handle high power loads efficiently.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and allows for high-density mounting on PCBs.

Maximum Power Dissipation Ambient: 1 W

Efficiently dissipates heat in ambient conditions, ensuring reliable operation under varying temperature environments.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures stable and predictable amplification characteristics in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150°C allows for reliable performance in extreme conditions.

Maximum Collector-Emitter Voltage: 600 V

High maximum collector-emitter voltage rating provides flexibility in circuit design and robustness against voltage spikes.

Transistor Element Material: SILICON

Silicon material offers high efficiency, low noise, and reliable performance for various electronic applications.

Maximum Collector Current (IC): 0.5 A

High collector current rating enables the transistor to handle substantial current loads without overheating.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuit layouts.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and ensures efficient heat dissipation for improved reliability.

Nominal Transition Frequency (fT): 35 MHz

High nominal transition frequency allows for fast switching speeds and high-frequency operation in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2142(TE16L1,NQ) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SA2142(TE16L1,NQ) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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