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2SA2040-E

Onsemi

2SA2040-E by Onsemi

The Onsemi 2SA2040-E is a PNP BJT transistor with hFE of 200, VCE of 50V, and IC of 8A. Ideal for switching applications, it has a fT of 290MHz and comes in a plastic/epoxy package with through-hole terminals.

Median Price

$0.334

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$0.327

100+ parts

$0.290

1k+ parts

$0.277

10k+ parts

-

100

$0.327

$0.290

$0.277

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Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$1.328

100+ parts

$1.208

1k+ parts

$1.089

10k+ parts

-

450

$1.328

$1.208

$1.089

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Rochester

USA . 6,461 parts In-Stock

1+ parts

-

100+ parts

$0.341

1k+ parts

$0.283

10k+ parts

$0.252

6,461

-

$0.341

$0.283

$0.252

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.277

10k+ parts

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100

-

$0.290

$0.277

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Distributors (In-Stock)

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Digiode

USA . 245 parts In-Stock

1+ parts

$0.320

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245

$0.320

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Vyrian

USA . 290 parts In-Stock

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$0.337

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290

$0.337

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Chip Stock

USA . 64,000 parts In-Stock

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64,000

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DigiKey Marketplace

USA . 11,718 parts In-Stock

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11,718

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Distributors (Availability)

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Corphita

USA . 366 parts In-Stock

1+ parts

$0.303

100+ parts

-

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366

$0.303

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Corohmni

South Africa . 54 parts In-Stock

1+ parts

$1.325

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-

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54

$1.325

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.328

100+ parts

$1.208

1k+ parts

$1.089

10k+ parts

-

450

$1.328

$1.208

$1.089

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Continental Prestige Electronics

USA . 12,718 parts In-Stock

1+ parts

-

100+ parts

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$0.304

10k+ parts

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12,718

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-

$0.304

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Problanco Electronics

Mexico . 8,059 parts In-Stock

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8,059

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Kulean Microsystems

USA . 6,237 parts In-Stock

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6,237

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Authorized Procurement Solutions

USA . 2,495 parts In-Stock

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2,495

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SupplyDigital Components

Austria . 1,766 parts In-Stock

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1,766

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Perfect Parts

USA . 1,683 parts In-Stock

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1,683

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UHIMA Technologies

Türkiye . 818 parts In-Stock

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818

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Northwest PG Solutions

USA . 714 parts In-Stock

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714

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Native Components

USA . 625 parts In-Stock

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625

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TANS Electronics

Latvia . 281 parts In-Stock

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281

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Overview

Unlock the power of innovation with the 2SA2040-E by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers seamless switching capabilities for a wide range of applications. From enhancing circuit performance to optimizing power efficiency, this PNP transistor delivers unmatched quality and reliability. Experience the difference with Onsemi's cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

The PNP polarity type allows for easy integration with other PNP transistors in circuits, simplifying circuit design.

Configuration: SINGLE

The single configuration simplifies circuit layouts and reduces complexity in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and efficient performance in such applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, optimizing the use of available space.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and easy soldering onto circuit boards.

No. of Terminals: 3

With three terminals, this transistor is easy to integrate into circuits and provides flexibility in connecting to other components.

Package Style (Meter): IN-LINE

The in-line package style allows for easy alignment and placement on circuit boards, enhancing ease of use during assembly.

Minimum DC Current Gain (hFE): 200

The minimum DC current gain of 200 ensures consistent and reliable amplification of current in the circuit, providing stable performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle higher voltage requirements in circuits, providing versatility in use.

Transistor Element Material: SILICON

The silicon transistor element material offers high efficiency and reliability in amplifying and switching signals, ensuring long-term performance.

Maximum Collector Current (IC): 8 A

The maximum collector current of 8A allows for handling high current loads in circuits, making it suitable for applications requiring high power.

Terminal Position: SINGLE

The single terminal position simplifies connections in circuits, reducing complexity and improving reliability.

Case Connection: COLLECTOR

The case connection at the collector ensures secure electrical connections and efficient heat dissipation, enhancing overall performance.

Nominal Transition Frequency (fT): 290 MHz

With a nominal transition frequency of 290 MHz, this transistor can handle high-frequency signals and provide fast response times in switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2040-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2040-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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