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2SA2039-TL-E

Onsemi

2SA2039-TL-E by Onsemi

2SA2039-TL-E by Onsemi is a PNP BJT transistor with hFE of 200, Vce of 50V, and Ic of 5A. Ideal for switching applications due to its high transition frequency of 360MHz. Features Gull Wing terminals in a small outline package suitable for surface mount technology.

Median Price

$0.557

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 168 parts In-Stock

1+ parts

$0.700

100+ parts

$0.508

1k+ parts

$0.450

10k+ parts

-

168

$0.700

$0.508

$0.450

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Element14

Singapore . 2,853 parts In-Stock

1+ parts

$1.170

100+ parts

$0.710

1k+ parts

$0.620

10k+ parts

-

2,853

$1.170

$0.710

$0.620

-

Newark

USA . 2,655 parts In-Stock

1+ parts

$1.560

100+ parts

$0.580

1k+ parts

$0.489

10k+ parts

$0.444

2,655

$1.560

$0.580

$0.489

$0.444

Mouser Electronics

USA . 45,973 parts In-Stock

1+ parts

$1.600

100+ parts

$0.673

1k+ parts

$0.476

10k+ parts

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45,973

$1.600

$0.673

$0.476

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DigiKey

USA . 59,126 parts In-Stock

1+ parts

-

100+ parts

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$0.475

10k+ parts

$0.435

59,126

-

-

$0.475

$0.435

Farnell

UK . 2,853 parts In-Stock

1+ parts

-

100+ parts

$0.547

1k+ parts

$0.409

10k+ parts

$0.350

2,853

-

$0.547

$0.409

$0.350

Flip Electronics (Authorized)

USA . 2,100 parts In-Stock

1+ parts

-

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-

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2,100

-

-

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Future Electronics

Canada . 700 parts In-Stock

1+ parts

-

100+ parts

-

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$0.315

10k+ parts

$0.300

700

-

-

$0.315

$0.300

Arrow

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.334

10k+ parts

$0.330

700

-

-

$0.334

$0.330

Rochester

USA . 210 parts In-Stock

1+ parts

-

100+ parts

$0.483

1k+ parts

$0.401

10k+ parts

$0.357

210

-

$0.483

$0.401

$0.357

Verical

USA . 26 parts In-Stock

1+ parts

-

100+ parts

$0.567

1k+ parts

$0.398

10k+ parts

$0.335

26

-

$0.567

$0.398

$0.335

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,194 parts In-Stock

1+ parts

$0.331

100+ parts

-

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2,194

$0.331

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-

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Digiode

USA . 124 parts In-Stock

1+ parts

$0.351

100+ parts

-

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124

$0.351

-

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Chip Stock

USA . 41,000 parts In-Stock

1+ parts

-

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41,000

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Flip Electronics

USA . 4,200 parts In-Stock

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4,200

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NAC Semi

USA . 1,400 parts In-Stock

1+ parts

-

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$0.760

1,400

-

-

-

$0.760

IBS Electronics

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.792

10k+ parts

$0.757

700

-

-

$0.792

$0.757

ACDS - Activité Composants Distribution Service

France . 418 parts In-Stock

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418

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Corohmni

South Africa . 392 parts In-Stock

1+ parts

$0.331

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392

$0.331

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Corphita

USA . 651 parts In-Stock

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$0.332

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651

$0.332

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Continental Prestige Electronics

USA . 3,210 parts In-Stock

1+ parts

$0.570

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$0.350

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3,210

$0.570

$0.350

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Kepictronics

USA . 26,600 parts In-Stock

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Problanco Electronics

Mexico . 8,160 parts In-Stock

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Perfect Parts

USA . 4,844 parts In-Stock

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SupplyDigital Components

Austria . 4,226 parts In-Stock

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TANS Electronics

Latvia . 3,818 parts In-Stock

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Kulean Microsystems

USA . 2,273 parts In-Stock

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Lixinc

USA . 827 parts In-Stock

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827

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UHIMA Technologies

Türkiye . 693 parts In-Stock

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693

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Netroflash

USA . 500 parts In-Stock

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500

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Overview

Upgrade your electronic devices with the reliable 2SA2039-TL-E PNP transistor from Onsemi. Manufactured with high-quality materials, this small signal BJT is perfect for switching applications. With a minimum DC current gain of 200 and a maximum collector-emitter voltage of 50V, this transistor offers exceptional performance and durability. Whether you're a hobbyist or a professional, the 2SA2039-TL-E provides value and efficiency in every use. Trust Onsemi for top-notch components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures efficient performance in turning on and off electronic signals.

Surface Mount: YES

The surface mount compatibility allows for easy and secure installation on PCBs, saving space and improving reliability.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and mounting on circuit boards, enhancing the overall design of the product.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical stability and easy soldering during assembly.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the risk of wiring errors, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for denser circuit designs in compact electronic devices.

Minimum DC Current Gain (hFE): 200

With a high minimum DC current gain, this transistor provides consistent and reliable amplification of current signals in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating ensures the transistor can handle a range of voltage levels without breakdown or damage.

Transistor Element Material: SILICON

Silicon transistors offer improved performance and reliability compared to other materials, making this product a durable choice for electronic circuits.

Maximum Collector Current (IC): 5 A

With a high maximum collector current rating, this transistor can handle larger current loads without overheating or failing, suitable for power applications.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and ensures stable electrical connections for reliable circuit operation.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of wiring errors, ensuring consistent performance in electronic circuits.

Case Connection: COLLECTOR

The case connection at the collector simplifies circuit design and improves thermal performance, ensuring the efficient operation of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating of 260°C ensures the transistor can withstand the soldering process without damage, maintaining its reliability.

Nominal Transition Frequency (fT): 360 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2039-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2039-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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