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2SA2112

Onsemi

2SA2112 by Onsemi

The Onsemi 2SA2112 is a PNP BJT with max power dissipation of 1W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 899 parts In-Stock

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Digiode

USA . 416 parts In-Stock

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Native Components

USA . 414 parts In-Stock

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$547.120

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$536.178

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$530.706

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$525.235

414

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$536.178

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$525.235

Northwest PG Solutions

USA . 739 parts In-Stock

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$601.832

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TANS Electronics

Latvia . 6,038 parts In-Stock

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Problanco Electronics

Mexico . 2,705 parts In-Stock

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SupplyDigital Components

Austria . 1,110 parts In-Stock

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Kulean Microsystems

USA . 1,083 parts In-Stock

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UHIMA Technologies

Türkiye . 658 parts In-Stock

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Corphita

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Corohmni

South Africa . 355 parts In-Stock

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Overview

Discover the power of the Onsemi 2SA2112, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that delivers unrivaled performance and reliability. With a maximum power dissipation of 1W and a minimum DC current gain of 200, this PNP transistor is perfect for a wide range of applications. From amplifiers to switching circuits, the 2SA2112 offers customers superior quality and efficiency, making it the ideal choice for any project. Experience the difference with Onsemi's cutting-edge technology and unlock endless possibilities today.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications and can handle positive currents efficiently.

Configuration: SINGLE

Single configuration transistors are simple to use and ideal for basic transistor applications.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures a good amplification capability in various circuit designs.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C allows this transistor to withstand higher thermal stress in demanding environments.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle relatively high current levels, suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2112 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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