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2SA2206(TE12L,F)

Toshiba

2SA2206(TE12L,F) by Toshiba

Toshiba's 2SA2206(TE12L,F) is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 2A, and min. DC current gain of 60. Ideal for switching applications due to its single configuration and small outline package style, operating at up to 150°C temperature with a nominal transition frequency of 100MHz.

Median Price

$36.104

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Overview

Elevate your electronic projects with the 2SA2206(TE12L,F) by Toshiba, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With Toshiba's renowned reputation for excellence in manufacturing, this PNP transistor offers exceptional performance and reliability. Its compact design and high operating temperature make it ideal for various electronic circuits, ensuring smooth operation and longevity. Upgrade your projects today with the 2SA2206(TE12L,F) and experience the superior quality and value that only Toshiba can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to integrate this transistor into a system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficient switching capabilities.

Surface Mount: YES

The surface mount capability allows for easy and compact placement on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor that is compatible with various mounting configurations.

Terminal Form: FLAT

The flat terminal form ensures secure connections and easy soldering during installation.

No. of Terminals: 3

With three terminals, this transistor is versatile and can be easily integrated into a wide range of circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, allowing for more compact and efficient system design.

Minimum DC Current Gain (hFE): 60

With a minimum DC current gain of 60, this transistor provides consistent and reliable amplification of electrical signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80V, this transistor can handle moderate voltage levels in various applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making this transistor a durable and effective choice.

Maximum Collector Current (IC): 2 A

The maximum collector current of 2A allows this transistor to handle higher current loads, making it suitable for a variety of applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, ensuring ease of use and efficient operation.

Case Connection: COLLECTOR

The collector case connection ensures proper heat dissipation and helps maintain stable performance during operation.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100MHz, this transistor offers high-speed switching capabilities for demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA2206(TE12L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA2206(TE12L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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