Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
Add filters
All
Selected
DDA114YUQ-7-F
Diodes Incorporated
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
.07 A
68
e3
1
2
260
PNP
.2 W
BIP General Purpose Small Signal
YES
MATTE TIN
30
SILICON
DDA124EUQ-13-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
.03 A
60
DDA124EUQ-7-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 60;
DDA143TUQ-13-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Transistor Element Material: SILICON;
.1 A
160
DDA143TUQ-7-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
DDA144EUQ-7-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DDC114TUQ-7-F
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR, HIGH RELIABILITY
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
100
R-PDSO-G6
6
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NPN
AEC-Q101
GULL WING
DUAL
250 MHz
.3 V
DDC114YUQ-7-F
BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY
DDC124EUQ-7-F
BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY
56
DDTA114ECAQ-13-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
.05 A
SINGLE WITH BUILT-IN RESISTOR
R-PDSO-G3
3
DDTA114ECAQ-7-F
DDTC123ECAQ-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
20
DDTC124EUAQ-13-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;
DDTC143TCAQ-13-F
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;
DDTC143TCAQ-7-F
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; No. of Elements: 1;
FMMT717QTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Collector Current (IC): 2.5 A; Reference Standard: AEC-Q101;
HIGH RELIABILITY
2.5 A
12 V
SINGLE
45
SWITCHING
110 MHz
SMUN5315DW1T1G
Onsemi
SMUN5315DW1T1G by Onsemi is a dual NPN and PNP BJT with 2 elements. Features include max power dissipation of 0.256W, min DC current gain of 160, and max collector current of 0.1A. Ideal for surface mount applications in electronics requiring high performance transistors.
NPN AND PNP
.256 W
BC640-016G
BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.
.5 A
80 V
25
TO-226AA
O-PBCY-T3
e1
ROUND
CYLINDRICAL
1.5 W
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
150 MHz
NSVUMC5NT2G
NPN AND PNP; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
BUILT-IN BIAS RESISTOR RATIO IS 1
COMPLEX
80
R-PDSO-G5
5
-65 Cel
.15 W
.25 V
SMMBT2369LT1G
SMMBT2369LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.3W and can handle a max collector-emitter voltage of 15V. With a small outline package style, it operates at up to 150°C and has a min DC current gain of 20 (hFE).
.2 A
15 V
TO-236AB
NOT SPECIFIED
.3 W
Matte Tin (Sn) - annealed
18 ns
12 ns
FMMT625QTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 135 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;
1 A
150 V
135 MHz
NSVB143TPDXV6T1G
NSVB143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 160, VCE of 50V, and IC of 0.1A. This transistor comes in a small outline package suitable for surface mount technology.
BUILT IN BIAS RESISTOR
R-PDSO-F6
.5 W
FLAT
NSVB144EPDXV6T1G
NSVB144EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. Featuring 2 elements, it offers max power dissipation of 0.5W, min hFE of 80, and max IC of 0.1A. Commonly used in low-power electronic circuits due to its silicon transistor element material.
ZXT13N50DE6QTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;
4 A
10
115 MHz
ZXT13P40DE6QTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 3 A;
3 A
40 V
15
1.7 W
MMBT2369A_R1_00001
Panjit International
MMBT2369A_R1_00001 by Panjit International is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a max collector current of 0.2A. It is commonly used in applications requiring low power amplification or switching, such as audio amplifiers or digital logic circuits.
40
TIN
FMMT491AQTC
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;
35
FMMT560QTC
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;
.15 A
500 V
60 MHz
FZT489QTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Terminal Finish: MATTE TIN;
COLLECTOR
30 V
R-PDSO-G4
4
ZXTC6717MCQTA
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4.5 A; Terminal Form: NO LEAD;
4.5 A
SEPARATE, 2 ELEMENTS
150
R-PDSO-N8
e4
8
NICKEL PALLADIUM GOLD
NO LEAD
120 MHz
ZXTC6718MCQTA
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 4.5 A; No. of Elements: 2;
20 V
Nickel/Palladium/Gold (Ni/Pd/Au)
140 MHz
2DA1971-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
400 V
140
R-PSSO-F3
75 MHz
2SC2655L-Y-AP
Micro Commercial Components
2SC2655L-Y-AP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 2A. It is commonly used in small signal applications due to its silicon element material and fT of 100MHz. The package style is cylindrical with through-hole terminals.
2 A
120
TO-92
100 MHz
BCX6825QTA
BCX6825QTA by Diodes Inc. is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. It comes in a small outline package with matte tin finish for surface mount assembly.
FMMT491QTC
FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.
60 V
ZXTC2045E6QTA
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 265 MHz; Maximum Collector Current (IC): 1.5 A; No. of Elements: 2;
1.5 A
180
265 MHz
SMUN5215T1G
SMUN5215T1G by Onsemi is a NPN BJT transistor with max power dissipation of 0.31W, min hFE of 160, and max IC of 0.1A. Ideal for surface mount applications in electronics requiring high DC current gain and low power consumption.
.31 W
2SAR502EBTL
ROHM
ROHM 2SAR502EBTL is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and fT of 520MHz. Ideal for amplifier applications due to its small outline package style and max collector current of 0.5A. Suitable for surface mount designs with a rectangular package shape and flat terminal form.
4 pF
200
R-PDSO-F3
AMPLIFIER
520 MHz
.4 V
SMMBTA14LT3G
SMMBTA14LT3G by Onsemi is a NPN BJT transistor with max power dissipation of 0.3W, hFE of 5000, and fT of 125MHz. Ideal for applications requiring high DC current gain and fast transition frequency in surface mount configurations.
.3 A
5000
125 MHz
3STL2540
STMicroelectronics
3STL2540 by STMicroelectronics is a PNP BJT with 1.2W power dissipation, hFE of 100, and IC of 5A. Ideal for applications requiring small signal amplification in surface mount configurations at temperatures up to 150 °C.
5 A
1.2 W
LP395Z/LFT4
Texas Instruments
NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: MATTE TIN; No. of Elements: 1; Maximum Operating Temperature: 125 Cel;
125 Cel
BC847C-TP-HF
BC847C-TP-HF by Micro Commercial Components is a NPN BJT with hFE of 420, VCE of 45V, and fT of 100MHz. Ideal for small signal applications in electronics due to its SILICON material, 0.1A IC, and GULL WING terminals for surface mount assembly.
45 V
420
DTA123TET1G
DTA123TET1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 160. It is designed for switching applications, features a built-in resistor, and comes in a small outline package suitable for surface mount technology.
DTA144TET1G
DTA144TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This surface-mount device comes in a small outline package with Gull Wing terminals.
MMBT2222A-TP-HF
MMBT2222A-TP-HF by Micro Commercial Components is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.
.6 A
.35 W
300 MHz
285 ns
35 ns
MMBT2907A-TP-HF
MMBT2907A-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, DC current gain of 50, and power dissipation of 0.35W. With a small outline package style and surface mount capability, it operates at up to 150°C.
50
200 MHz
110 ns
50 ns
MMUN2140LT1G
MMUN2140LT1G by Onsemi is a PNP BJT with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 120. This surface-mount transistor comes in a small outline package with matte tin finish.
.4 W
NSBC124XF3T5G
NSBC124XF3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has max. collector-emitter voltage of 50V, max. collector current of 0.1A, and min. DC current gain of 80 (hFE). This small outline transistor in plastic package is ideal for surface mount designs.
BUILT IN BIAS RESISTANCE RATIO IS 2.14
.297 W
BIP General Purpose Small Signals
© 2023 All rights reserved
