Loading...

DTA123TET1G

Onsemi

DTA123TET1G by Onsemi

DTA123TET1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 160. It is designed for switching applications, features a built-in resistor, and comes in a small outline package suitable for surface mount technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,408

-

-

-

-

Chip Stock

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,500

-

-

-

-

Digiode

USA . 2,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,020

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,060 parts In-Stock

1+ parts

$4.988

100+ parts

-

1k+ parts

$4.788

10k+ parts

$4.788

3,060

$4.988

-

$4.788

$4.788

AZTECH Wire

Italy . 624 parts In-Stock

1+ parts

$11.800

100+ parts

-

1k+ parts

-

10k+ parts

-

624

$11.800

-

-

-

Native Components

USA . 399 parts In-Stock

1+ parts

$69.330

100+ parts

-

1k+ parts

-

10k+ parts

$66.557

399

$69.330

-

-

$66.557

Northwest PG Solutions

USA . 1,243 parts In-Stock

1+ parts

$76.263

100+ parts

-

1k+ parts

-

10k+ parts

-

1,243

$76.263

-

-

-

TANS Electronics

Latvia . 7,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,315

-

-

-

-

Problanco Electronics

Mexico . 6,737 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,737

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,762 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,762

-

-

-

-

SupplyDigital Components

Austria . 5,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,038

-

-

-

-

Alle Elektronik GmbH

Germany . 3,841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,841

-

-

-

-

Kepictronics

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,500

-

-

-

-

Kulean Microsystems

USA . 2,941 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,941

-

-

-

-

Authorized Procurement Solutions

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,800

-

-

-

-

Corphita

USA . 2,345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,345

-

-

-

-

UHIMA Technologies

Türkiye . 230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

230

-

-

-

-

Corohmni

South Africa . 145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

145

-

-

-

-

Overview

Experience the high-quality performance of the DTA123TET1G by Onsemi, a top-tier manufacturer known for its superior products. This Small Signal Bipolar Junction Transistor with built-in resistor is perfect for switching applications, offering reliability and efficiency. With a PNP polarity, compact rectangular package, and gull wing terminals, this transistor is ideal for various electronic projects. Trust in Onsemi's reputation for excellence and choose the DTA123TET1G for your next design to experience unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and this choice allows for flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

This transistor is optimized for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easier to integrate into modern electronics and SMT assembly processes.

Package Shape: RECTANGULAR

Rectangular shape aids in easy placement and orientation on the PCB.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering during assembly.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect and use in various circuit configurations.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels reliably.

Minimum DC Current Gain (hFE): 160

A minimum DC current gain of 160 ensures consistent and stable amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for compatibility with a wide range of voltage requirements.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance in transistors.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good solderability and annealing ensures long-term reliability of the terminals.

Terminal Position: DUAL

The dual terminal position allows for easy mounting and connection in various circuit layouts.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA123TET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTA123TET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20