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SMUN5215T1G

Onsemi

SMUN5215T1G by Onsemi

SMUN5215T1G by Onsemi is a NPN BJT transistor with max power dissipation of 0.31W, min hFE of 160, and max IC of 0.1A. Ideal for surface mount applications in electronics requiring high DC current gain and low power consumption.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,999 parts In-Stock

1+ parts

$0.200

100+ parts

$0.077

1k+ parts

$0.049

10k+ parts

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8,999

$0.200

$0.077

$0.049

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Newark

USA . 33,000 parts In-Stock

1+ parts

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$0.035

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$0.035

Flip Electronics (Authorized)

USA . 18,000 parts In-Stock

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Rochester

USA . 15,000 parts In-Stock

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$0.027

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$0.022

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$0.020

15,000

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$0.027

$0.022

$0.020

Verical

USA . 15,000 parts In-Stock

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15,000

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Distributors (In-Stock)

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Digiode

USA . 1,650 parts In-Stock

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$0.024

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1,650

$0.024

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Chip Stock

USA . 66,000 parts In-Stock

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66,000

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Flip Electronics

USA . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 5,945 parts In-Stock

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5,945

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Distributors (Availability)

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Corphita

USA . 173 parts In-Stock

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$0.022

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173

$0.022

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Corohmni

South Africa . 157 parts In-Stock

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$0.025

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157

$0.025

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Component Stockers USA

USA . 13,249 parts In-Stock

1+ parts

$0.310

100+ parts

$0.110

1k+ parts

$0.060

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13,249

$0.310

$0.110

$0.060

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Kepictronics

USA . 25,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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SupplyDigital Components

Austria . 7,858 parts In-Stock

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7,858

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TANS Electronics

Latvia . 7,751 parts In-Stock

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Problanco Electronics

Mexico . 1,285 parts In-Stock

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1,285

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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Kulean Microsystems

USA . 90 parts In-Stock

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90

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Overview

Experience the superior quality and reliability of Onsemi with the SMUN5215T1G Small Signal Bipolar Junction Transistor. This NPN transistor is perfect for a variety of applications, from amplification to switching. With a maximum power dissipation of 0.31W and a minimum DC current gain of 160, this transistor offers unmatched performance. Say goodbye to worries about overheating with a maximum collector current of 0.1A and a peak reflow temperature of 260 °C. Trust Onsemi to deliver top-notch components that meet your needs every time.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Power Dissipation (Abs): 0.31 W

With a maximum power dissipation of 0.31 W, this transistor can handle moderate power levels, suitable for many low to medium power applications.

Minimum DC Current Gain (hFE): 160

The high DC current gain of 160 ensures a reliable and consistent amplification of the input signal, making this transistor efficient in signal processing.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for low to medium current applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and conductivity, ensuring a reliable electrical connection during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds helps prevent thermal stress on the transistor during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high temperature soldering processes, ensuring reliable solder joints.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5215T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

160

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SMUN5215T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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