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SMUN5314DW1T1G

Onsemi

SMUN5314DW1T1G by Onsemi

SMUN5314DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. Features 2 elements with built-in resistor, hFE of 80, VCE of 50V, and IC of 0.1A. It comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 460,350 parts In-Stock

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$0.036

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460,350

$0.036

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Arrow

USA . 30,000 parts In-Stock

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$0.127

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$0.127

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30,000

$0.127

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$0.127

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DigiKey

USA . 30,000 parts In-Stock

1+ parts

$0.280

100+ parts

$0.107

1k+ parts

$0.070

10k+ parts

-

30,000

$0.280

$0.107

$0.070

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Rochester

USA . 132,000 parts In-Stock

1+ parts

-

100+ parts

$0.042

1k+ parts

$0.035

10k+ parts

$0.031

132,000

-

$0.042

$0.035

$0.031

Verical

USA . 31,418 parts In-Stock

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31,418

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Chip1Stop

Japan . 2,200 parts In-Stock

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$0.056

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$0.050

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2,200

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$0.056

$0.050

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,918 parts In-Stock

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$0.033

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1,918

$0.033

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TME

Poland . 253 parts In-Stock

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$0.250

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$0.129

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253

$0.250

$0.129

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IBS Electronics

USA . 2,450 parts In-Stock

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$0.309

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$0.185

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$0.047

2,450

$0.309

$0.185

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$0.047

Nova Conductors

Japan . 17 parts In-Stock

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$1.000

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17

$1.000

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NAC Semi

USA . 54,000 parts In-Stock

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$0.160

54,000

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$0.160

Chip Stock

USA . 45,000 parts In-Stock

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Vyrian

USA . 39,658 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

USA . 3,000 parts In-Stock

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Flip Electronics

USA . 215 parts In-Stock

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215

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Distributors (Availability)

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Semicontronic

India . 36,089 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

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$0.025

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36,089

$0.026

$0.025

$0.025

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Ampacity Inc.

Singapore . 32,946 parts In-Stock

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$0.026

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32,946

$0.026

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Component Stockers USA

USA . 152,378 parts In-Stock

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$0.030

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$0.030

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$0.030

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$0.030

152,378

$0.030

$0.030

$0.030

$0.030

Corohmni

South Africa . 349 parts In-Stock

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$0.031

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349

$0.031

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Corphita

USA . 2,126 parts In-Stock

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$0.032

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2,126

$0.032

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Argo Parts USA

USA . 3,076 parts In-Stock

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$0.128

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$0.124

3,076

$0.128

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$0.124

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.980

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$0.941

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500

$0.980

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$0.941

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Aztec Data Supply Inc.

USA . 3,037 parts In-Stock

1+ parts

$1.333

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3,037

$1.333

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Perfect Parts

USA . 687,411 parts In-Stock

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Authorized Procurement Solutions

USA . 132,000 parts In-Stock

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Eastek

USA . 78,000 parts In-Stock

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GreenTree Electronics

Israel . 42,000 parts In-Stock

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Continental Prestige Electronics

USA . 27,370 parts In-Stock

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$0.126

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$0.086

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$0.082

27,370

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$0.086

$0.082

Lixinc

USA . 9,401 parts In-Stock

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TANS Electronics

Latvia . 6,728 parts In-Stock

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SupplyDigital Components

Austria . 6,664 parts In-Stock

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6,664

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Problanco Electronics

Mexico . 5,829 parts In-Stock

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Kepictronics

USA . 5,778 parts In-Stock

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Futuretech Components

Singapore . 5,300 parts In-Stock

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,311 parts In-Stock

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UHIMA Technologies

Türkiye . 565 parts In-Stock

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565

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Overview

Enhance your electronic devices with the SMUN5314DW1T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With NPN and PNP configurations, built-in resistors, and a compact rectangular package, this transistor offers seamless integration and high performance. The Matte Tin terminal finish ensures durability while the AEC-Q101 reference standard guarantees reliability. Elevate your projects with the superior functionality and efficiency of the SMUN5314DW1T1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and cost-effective, ideal for applications where weight and cost are important factors.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design, making this transistor suitable for a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The separate configuration with built-in resistor simplifies circuit design and saves space, making it convenient for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it suitable for various electronic devices.

Surface Mount: YES

Being surface mountable allows for easy integration onto PCBs, making assembly quicker and saving on production costs.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and reliability, enhancing the durability of the transistor in various operating conditions.

Maximum Power Dissipation (Abs): 0.256 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels, making it suitable for a range of applications.

Minimum DC Current Gain (hFE): 80

The minimum DC current gain of 80 ensures consistent and reliable performance in amplification applications, providing stable signal amplification.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage capability allows for operation in higher voltage circuits with reduced risk of breakdown, ensuring reliability.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and long-term reliability, making them a preferred choice in a wide range of applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, suitable for various switching and amplification tasks.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections in various environments.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout options, enabling easy integration into circuit designs and enhancing installation convenience.

Maximum Time At Peak Reflow Temperature (s): 30

The relatively short maximum time at peak reflow temperature ensures quick and efficient soldering during assembly, minimizing thermal stress on the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliable and durable solder joints.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transistor meets stringent automotive industry requirements for reliability, quality, and performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5314DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5314DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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