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SMUN5111T1G

Onsemi

SMUN5111T1G by Onsemi

SMUN5111T1G by Onsemi is a PNP BJT transistor with a built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface-mount device comes in a small outline package with gull wing terminals, making it suitable for compact electronic designs.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Arrow

USA . 1,298 parts In-Stock

1+ parts

$0.038

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$0.014

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$0.006

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1,298

$0.038

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$0.006

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Chip1Stop

Japan . 42,000 parts In-Stock

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$0.025

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$0.025

Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

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EBV Elektronik

Germany . 6,000 parts In-Stock

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Rochester

USA . 1,749 parts In-Stock

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$0.027

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$0.022

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$0.020

1,749

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$0.027

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Verical

USA . 1,298 parts In-Stock

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$0.006

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Farnell

UK . 680 parts In-Stock

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$0.061

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$0.037

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$0.032

680

-

$0.061

$0.037

$0.032

Element14

Singapore . 680 parts In-Stock

1+ parts

-

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$0.107

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$0.056

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$0.041

680

-

$0.107

$0.056

$0.041

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Digiode

USA . 225 parts In-Stock

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$0.024

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$0.024

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Nova Conductors

Japan . 50 parts In-Stock

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$0.064

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50

$0.064

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Bristol Electronics

USA . 1,985 parts In-Stock

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$0.150

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$0.075

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$0.030

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1,985

$0.150

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Vyrian

USA . 277,373 parts In-Stock

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NAC Semi

USA . 48,000 parts In-Stock

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Chip Stock

USA . 36,000 parts In-Stock

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IBS Electronics

USA . 27,000 parts In-Stock

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$0.027

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$0.027

Flip Electronics

USA . 9,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,084 parts In-Stock

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Microfarads

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Ampacity Inc.

Singapore . 277,613 parts In-Stock

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$0.021

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277,613

$0.021

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Semicontronic

India . 277,606 parts In-Stock

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$0.021

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277,606

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Corphita

USA . 1,516 parts In-Stock

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$0.022

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Corohmni

South Africa . 227 parts In-Stock

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$0.025

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227

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Component Stockers USA

USA . 134,453 parts In-Stock

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134,453

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$0.020

Argo Parts USA

USA . 230 parts In-Stock

1+ parts

$0.064

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$0.062

230

$0.064

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$0.062

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.064

100+ parts

$0.061

1k+ parts

$0.058

10k+ parts

$0.057

100

$0.064

$0.061

$0.058

$0.057

Aztec Data Supply Inc.

USA . 561 parts In-Stock

1+ parts

$1.168

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561

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Kepictronics

USA . 117,000 parts In-Stock

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Perfect Parts

USA . 80,640 parts In-Stock

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Continental Prestige Electronics

USA . 70,749 parts In-Stock

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Kulean Microsystems

USA . 7,568 parts In-Stock

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Problanco Electronics

Mexico . 6,806 parts In-Stock

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TANS Electronics

Latvia . 6,187 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,156 parts In-Stock

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Lixinc

USA . 4,153 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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190

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Overview

Discover the SMUN5111T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a single built-in resistor and PNP polarity, this rectangular-shaped package offers ease of installation with gull wing terminals for surface mounting. Manufactured by Onsemi, known for their superior products, this transistor provides a maximum collector-emitter voltage of 50V and a minimum DC current gain of 35. Trust in the reliability and performance of Onsemi's SMUN5111T1G for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protects the transistor from external elements.

Polarity or Channel Type: PNP

PNP configuration allows for high-speed switching, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount capability enables easy and efficient assembly on PCBs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and soldering on the PCB.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and ensures secure connection.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function properly.

Maximum Power Dissipation (Abs): 0.31 W

With a maximum power dissipation of 0.31 W, the transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 ensures reliable amplification and switching performance.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating of 50 V provides flexibility in various voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in the transistor element.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, the transistor can handle moderate current levels.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and stable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for easy and flexible PCB mounting options.

Reference Standard: AEC-Q101

Meets AEC-Q101 automotive quality standard for reliable and durable performance in automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5111T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5111T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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