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SMUN5214T1G

Onsemi

SMUN5214T1G by Onsemi

SMUN5214T1G by Onsemi is a NPN BJT with built-in resistor for switching applications. Features include hFE of 80, VCE of 50V, and IC of 0.1A. Its small outline package with gull wing terminals makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 12 parts In-Stock

1+ parts

$0.196

100+ parts

$0.075

1k+ parts

$0.048

10k+ parts

-

12

$0.196

$0.075

$0.048

-

Mouser Electronics

USA . 13,770 parts In-Stock

1+ parts

$0.200

100+ parts

$0.077

1k+ parts

$0.050

10k+ parts

$0.049

13,770

$0.200

$0.077

$0.050

$0.049

Rochester

USA . 183,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

183,000

-

$0.030

$0.025

$0.023

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

60,000

-

-

-

$0.035

Farnell

UK . 14,470 parts In-Stock

1+ parts

-

100+ parts

$0.056

1k+ parts

$0.037

10k+ parts

$0.033

14,470

-

$0.056

$0.037

$0.033

Element14

Singapore . 11,952 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.066

10k+ parts

$0.065

11,952

-

$0.102

$0.066

$0.065

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.045

3,000

-

-

-

$0.045

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,676 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

1,676

$0.024

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$0.066

-

-

-

TME

Poland . 2,720 parts In-Stock

1+ parts

$0.180

100+ parts

$0.075

1k+ parts

$0.044

10k+ parts

$0.040

2,720

$0.180

$0.075

$0.044

$0.040

NAC Semi

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

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72,000

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-

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Vyrian

USA . 65,859 parts In-Stock

1+ parts

-

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65,859

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-

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Chip Stock

USA . 62,000 parts In-Stock

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-

100+ parts

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62,000

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-

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Extreme Components

USA . 3,141 parts In-Stock

1+ parts

-

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3,141

-

-

-

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J2 Sourcing AB

Sweden . 500 parts In-Stock

1+ parts

-

100+ parts

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500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 69,916 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

10k+ parts

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69,916

$0.021

-

-

-

Semicontronic

India . 67,255 parts In-Stock

1+ parts

$0.021

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

-

67,255

$0.021

$0.020

$0.020

-

Corphita

USA . 512 parts In-Stock

1+ parts

$0.022

100+ parts

-

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-

10k+ parts

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512

$0.022

-

-

-

Corohmni

South Africa . 300 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.025

-

-

-

Argo Parts USA

USA . 1,027 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

-

10k+ parts

$0.064

1,027

$0.066

-

-

$0.064

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

$0.063

10k+ parts

$0.061

1,000

$0.066

-

$0.063

$0.061

Continental Prestige Electronics

USA . 19,870 parts In-Stock

1+ parts

$0.326

100+ parts

$0.124

1k+ parts

$0.057

10k+ parts

$0.037

19,870

$0.326

$0.124

$0.057

$0.037

Aztec Data Supply Inc.

USA . 166 parts In-Stock

1+ parts

$1.683

100+ parts

-

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-

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166

$1.683

-

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Perfect Parts

USA . 10,967,065 parts In-Stock

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10,967,065

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GreenTree Electronics

Israel . 1,608,000 parts In-Stock

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1,608,000

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Eastek

USA . 822,000 parts In-Stock

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822,000

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RC Electronics

USA . 144,294 parts In-Stock

1+ parts

-

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

$0.060

144,294

-

$0.070

$0.060

$0.060

Futuretech Components

Singapore . 20,000 parts In-Stock

1+ parts

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20,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 7,844 parts In-Stock

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7,844

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Kulean Microsystems

USA . 2,383 parts In-Stock

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2,383

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Kepictronics

USA . 1,380 parts In-Stock

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1,380

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SupplyDigital Components

Austria . 1,019 parts In-Stock

1+ parts

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1,019

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-

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UHIMA Technologies

Türkiye . 526 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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526

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-

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Problanco Electronics

Mexico . 461 parts In-Stock

1+ parts

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461

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-

Overview

Enhance the performance of your electronic devices with the SMUN5214T1G by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for switching applications, this NPN transistor with a built-in resistor delivers seamless functionality. With a maximum power dissipation of 0.31W and a maximum collector-emitter voltage of 50V, this product ensures optimal performance. Trust in Onsemi's industry-leading expertise and elevate your projects with the SMUN5214T1G. Upgrade to excellence today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile in its functionality.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor convenient for small electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making this transistor suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into existing circuit designs.

Maximum Power Dissipation (Abs): 0.31 W

With a high maximum power dissipation, this transistor can handle relatively high power levels, making it reliable in demanding applications.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and stable amplification performance, making this transistor reliable in signal processing applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for safe operation in applications where voltage spikes or fluctuations may occur.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring consistent performance and durability for this transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and conductivity, ensuring reliable connections during PCB assembly.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit layout and connection options, making this transistor versatile in various design configurations.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 automotive standard ensures high reliability and quality for this transistor, making it suitable for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5214T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5214T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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