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SMUN2211T3G

Onsemi

SMUN2211T3G by Onsemi

SMUN2211T3G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.1A. It has a built-in resistor for switching applications, in a small outline package suitable for surface mount technology.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20,000 parts In-Stock

1+ parts

$0.220

100+ parts

$0.080

1k+ parts

$0.050

10k+ parts

$0.033

20,000

$0.220

$0.080

$0.050

$0.033

Flip Electronics (Authorized)

USA . 634,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

634,000

-

-

-

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Rochester

USA . 380,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

380,000

-

$0.030

$0.025

$0.023

Verical

USA . 340,000 parts In-Stock

1+ parts

-

100+ parts

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$0.038

340,000

-

-

-

$0.038

Newark

USA . 60,000 parts In-Stock

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60,000

-

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Distributors (In-Stock)

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Digiode

USA . 1,725 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,725

$0.024

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-

-

Flip Electronics

USA . 727,789 parts In-Stock

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727,789

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DigiKey Marketplace

USA . 381,174 parts In-Stock

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381,174

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Chip Stock

USA . 20,000 parts In-Stock

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20,000

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Vyrian

USA . 9,147 parts In-Stock

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9,147

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,182 parts In-Stock

1+ parts

$0.022

100+ parts

-

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2,182

$0.022

-

-

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Corohmni

South Africa . 187 parts In-Stock

1+ parts

$0.023

100+ parts

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187

$0.023

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Continental Prestige Electronics

USA . 370,000 parts In-Stock

1+ parts

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100+ parts

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$0.029

370,000

-

-

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$0.029

Kepictronics

USA . 370,000 parts In-Stock

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370,000

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QUARKTWIN TECHNOLOGY LTD

USA . 20,545 parts In-Stock

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20,545

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TANS Electronics

Latvia . 8,133 parts In-Stock

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8,133

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Problanco Electronics

Mexico . 7,207 parts In-Stock

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7,207

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SupplyDigital Components

Austria . 1,335 parts In-Stock

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1,335

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Kulean Microsystems

USA . 885 parts In-Stock

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885

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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69

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Overview

Unlock the power of innovation with the SMUN2211T3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this NPN transistor boasts a single configuration with a built-in resistor for enhanced performance. With its compact rectangular package and gull wing terminals, this transistor offers easy surface mount installation. Ideal for a wide range of electronic projects, the SMUN2211T3G delivers reliable operation and maximum power dissipation of 0.338 W. Upgrade your designs with this versatile component and experience the value and benefits it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for a variety of environments.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by incorporating a resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it ideal for applications that require rapid on/off transitions.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

Facilitates straightforward placement and soldering on a circuit board.

Terminal Form: GULL WING

Enhances heat dissipation and mechanical stability, ensuring reliable performance under various conditions.

No. of Terminals: 3

Simplifies connection to other components while maintaining a compact footprint.

Maximum Power Dissipation (Abs): 0.338 W

Indicates the transistor's ability to handle power dissipation, allowing for safe operation in different applications.

Package Style (Meter): SMALL OUTLINE

Offers a compact and lightweight design, suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 35

Ensures sufficient amplification capabilities for signal processing and control applications.

Maximum Collector-Emitter Voltage: 50 V

Provides a safe operating margin for voltage requirements in various circuit configurations.

Transistor Element Material: SILICON

Possesses excellent electrical properties and reliability, ensuring consistent performance over time.

Maximum Collector Current (IC): 0.1 A

Suitable for low-current applications such as signal amplification, switching, and control.

Terminal Finish: Matte Tin (Sn) - annealed

Facilitates soldering and enhances electrical conductivity for reliable connections.

Terminal Position: DUAL

Allows for convenient and secure mounting on a PCB, ensuring stable connections during operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN2211T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN2211T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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