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SMUN5335DW1T1G

Onsemi

SMUN5335DW1T1G by Onsemi

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .256 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

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3

$0.034

-

-

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Chip1Stop

Japan . 2,844 parts In-Stock

1+ parts

$0.078

100+ parts

-

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10k+ parts

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2,844

$0.078

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Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

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6,000

-

-

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Verical

USA . 2,844 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.092

10k+ parts

-

2,844

-

$0.110

$0.092

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$0.129

100+ parts

-

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42

$0.129

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Digiode

USA . 1,924 parts In-Stock

1+ parts

$0.256

100+ parts

-

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1,924

$0.256

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Chip Stock

USA . 443,503 parts In-Stock

1+ parts

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443,503

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NAC Semi

USA . 60,000 parts In-Stock

1+ parts

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$0.086

60,000

-

-

-

$0.086

Vyrian

USA . 10,076 parts In-Stock

1+ parts

-

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10,076

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-

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Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

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6,000

-

-

-

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TME

Poland . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.149

1k+ parts

$0.135

10k+ parts

$0.121

4,000

-

$0.149

$0.135

$0.121

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 109,032 parts In-Stock

1+ parts

$0.028

100+ parts

-

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-

10k+ parts

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109,032

$0.028

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-

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Corohmni

South Africa . 358 parts In-Stock

1+ parts

$0.033

100+ parts

-

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358

$0.033

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Semicontronic

India . 109,330 parts In-Stock

1+ parts

$0.061

100+ parts

$0.059

1k+ parts

$0.059

10k+ parts

-

109,330

$0.061

$0.059

$0.059

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.121

100+ parts

$0.121

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$0.121

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100

$0.121

$0.121

$0.121

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.126

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$0.121

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1,000

$0.126

-

$0.121

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Continental Prestige Electronics

USA . 6,737 parts In-Stock

1+ parts

$0.129

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$0.126

6,737

$0.129

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-

$0.126

Argo Parts USA

USA . 718 parts In-Stock

1+ parts

$0.129

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$0.125

718

$0.129

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$0.125

Corphita

USA . 1,077 parts In-Stock

1+ parts

$0.243

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1,077

$0.243

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Component Stockers USA

USA . 11,398 parts In-Stock

1+ parts

$0.370

100+ parts

$0.170

1k+ parts

$0.110

10k+ parts

$0.080

11,398

$0.370

$0.170

$0.110

$0.080

Aztec Data Supply Inc.

USA . 759 parts In-Stock

1+ parts

$1.410

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759

$1.410

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Perfect Parts

USA . 218,400 parts In-Stock

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GreenTree Electronics

Israel . 81,000 parts In-Stock

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Eastek

USA . 33,000 parts In-Stock

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$0.130

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Lixinc

USA . 13,975 parts In-Stock

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Problanco Electronics

Mexico . 7,135 parts In-Stock

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7,135

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SupplyDigital Components

Austria . 7,062 parts In-Stock

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7,062

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TANS Electronics

Latvia . 6,313 parts In-Stock

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6,313

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Kulean Microsystems

USA . 4,943 parts In-Stock

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4,943

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UHIMA Technologies

Türkiye . 448 parts In-Stock

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448

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5335DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5335DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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