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SMUN2212T1G

Onsemi

SMUN2212T1G by Onsemi

SMUN2212T1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 60. This surface mount transistor comes in a small outline package with matte tin finish.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,500 parts In-Stock

1+ parts

$0.190

100+ parts

$0.070

1k+ parts

$0.045

10k+ parts

-

2,500

$0.190

$0.070

$0.045

-

Rochester

USA . 98,207 parts In-Stock

1+ parts

-

100+ parts

$0.024

1k+ parts

$0.020

10k+ parts

$0.018

98,207

-

$0.024

$0.020

$0.018

Verical

USA . 98,207 parts In-Stock

1+ parts

-

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98,207

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Flip Electronics (Authorized)

USA . 33,000 parts In-Stock

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33,000

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Newark

USA . 18,000 parts In-Stock

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$0.037

18,000

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$0.037

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 544 parts In-Stock

1+ parts

$0.024

100+ parts

-

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544

$0.024

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Vyrian

USA . 1,068 parts In-Stock

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$0.025

100+ parts

-

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1,068

$0.025

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Flip Electronics

USA . 117,000 parts In-Stock

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DigiKey Marketplace

USA . 107,665 parts In-Stock

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107,665

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,716 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,716

$0.022

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Corohmni

South Africa . 486 parts In-Stock

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$0.025

100+ parts

-

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486

$0.025

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Component Stockers USA

USA . 154,800 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

154,800

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 107,665 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.029

107,665

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$0.029

Kepictronics

USA . 107,665 parts In-Stock

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107,665

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Perfect Parts

USA . 26,505 parts In-Stock

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26,505

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SupplyDigital Components

Austria . 7,015 parts In-Stock

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TANS Electronics

Latvia . 3,270 parts In-Stock

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3,270

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Problanco Electronics

Mexico . 1,649 parts In-Stock

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1,649

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UHIMA Technologies

Türkiye . 830 parts In-Stock

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830

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Kulean Microsystems

USA . 402 parts In-Stock

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402

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Overview

Experience the superior quality and reliability of Onsemi's SMUN2212T1G Small Signal Bipolar Junction Transistor. With a focus on precision engineering, this NPN transistor offers exceptional performance in switching applications. Its compact design and built-in resistor make it ideal for space-constrained projects. Trust in Onsemi's reputation for excellence and innovation in semiconductor technology to deliver the value and benefits you need. Upgrade your electronics with the SMUN2212T1G and unlock new possibilities in circuit design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design and saves space with integrated resistor.

Transistor Application: SWITCHING

Ideal for applications requiring fast switching speeds.

Surface Mount: YES

Easy to mount on PCBs, saves assembly time.

Package Shape: RECTANGULAR

Space-efficient design, suitable for compact circuits.

Terminal Form: GULL WING

Facilitates easy soldering and reliable connections.

No. of Terminals: 3

Simple and easy to connect in circuits.

Maximum Power Dissipation (Abs): 0.338 W

Capability to handle power requirements without overheating.

Package Style (Meter): SMALL OUTLINE

Space-saving package suitable for compact designs.

Minimum DC Current Gain (hFE): 60

Consistent amplification performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Highly reliable material for transistor construction.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current requirements.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance.

Terminal Position: DUAL

Allow for versatile connection options in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN2212T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN2212T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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