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SMUN5235DW1T1G

Onsemi

SMUN5235DW1T1G by Onsemi

SMUN5235DW1T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and peak reflow temp of 260°C. This small outline package with gull wing terminals is AEC-Q101 compliant.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,000 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

1k+ parts

$0.071

10k+ parts

-

6,000

$0.290

$0.109

$0.071

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Arrow

USA . 2,650 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

1k+ parts

$0.071

10k+ parts

$0.050

2,650

$0.290

$0.109

$0.071

$0.050

Chip1Stop

Japan . 30,000 parts In-Stock

1+ parts

-

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$0.032

30,000

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$0.032

Verical

USA . 2,650 parts In-Stock

1+ parts

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$0.071

10k+ parts

$0.050

2,650

-

-

$0.071

$0.050

Rochester

USA . 2,276 parts In-Stock

1+ parts

-

100+ parts

$0.085

1k+ parts

$0.070

10k+ parts

$0.063

2,276

-

$0.085

$0.070

$0.063

Farnell

UK . 1,110 parts In-Stock

1+ parts

-

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$0.057

10k+ parts

$0.047

1,110

-

-

$0.057

$0.047

Element14

Singapore . 1,110 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.081

10k+ parts

$0.080

1,110

-

$0.150

$0.081

$0.080

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,921 parts In-Stock

1+ parts

$0.034

100+ parts

-

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1,921

$0.034

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Nova Conductors

Japan . 44 parts In-Stock

1+ parts

$0.125

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44

$0.125

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Flip Electronics

USA . 423,000 parts In-Stock

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Vyrian

USA . 253,544 parts In-Stock

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253,544

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NAC Semi

USA . 60,000 parts In-Stock

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$0.088

60,000

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$0.088

IBS Electronics

USA . 60,000 parts In-Stock

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$0.040

60,000

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$0.040

Chip Stock

USA . 45,500 parts In-Stock

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45,500

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Semi Source

USA . 32,590 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,900 parts In-Stock

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4,900

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ComSIT USA

USA . 4,900 parts In-Stock

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4,900

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Cyclops Electronics Ltd

UK . 2,936 parts In-Stock

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2,936

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Bristol Electronics

USA . 1,226 parts In-Stock

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Microfarads

USA . 189 parts In-Stock

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189

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Distributors (Availability)

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Ampacity Inc.

Singapore . 276,098 parts In-Stock

1+ parts

$0.027

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276,098

$0.027

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Semicontronic

India . 253,940 parts In-Stock

1+ parts

$0.027

100+ parts

$0.026

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$0.026

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253,940

$0.027

$0.026

$0.026

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Corohmni

South Africa . 157 parts In-Stock

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$0.032

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157

$0.032

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Corphita

USA . 215 parts In-Stock

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$0.032

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215

$0.032

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Argo Parts USA

USA . 4,625 parts In-Stock

1+ parts

$0.125

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$0.121

4,625

$0.125

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$0.121

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.125

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$0.122

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50

$0.125

$0.122

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Aztec Data Supply Inc.

USA . 199 parts In-Stock

1+ parts

$0.470

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199

$0.470

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Continental Prestige Electronics

USA . 242,276 parts In-Stock

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242,276

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GreenTree Electronics

Israel . 168,000 parts In-Stock

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RC Electronics

USA . 69,353 parts In-Stock

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$0.130

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$0.120

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$0.120

69,353

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$0.120

$0.120

Perfect Parts

USA . 62,026 parts In-Stock

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62,026

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Infinite Electronics LLP (Excess)

. 54,009 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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Lixinc

USA . 12,181 parts In-Stock

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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Kepictronics

USA . 4,919 parts In-Stock

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SupplyDigital Components

Austria . 4,752 parts In-Stock

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TANS Electronics

Latvia . 4,591 parts In-Stock

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Formix International (Excess)

India . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,332 parts In-Stock

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2,332

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Problanco Electronics

Mexico . 732 parts In-Stock

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732

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UHIMA Technologies

Türkiye . 86 parts In-Stock

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86

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Overview

Experience the power of the SMUN5235DW1T1G by Onsemi, a top-notch NPN Small Signal Bipolar Junction Transistor with built-in resistors for seamless switching applications. Manufactured by Onsemi, known for their high-quality components, this transistor offers unparalleled performance and reliability. With a maximum VCEsat of 0.25V and a minimum DC current gain of 80, this transistor is designed to exceed expectations. Whether you need it for automotive, industrial, or consumer electronics, the SMUN5235DW1T1G delivers exceptional value and efficiency, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable

Polarity or Channel Type: NPN

Commonly used type for general purpose applications, making it versatile

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy control and switching operations with the built-in resistor

Transistor Application: SWITCHING

Designed specifically for switching applications, providing optimal performance

Surface Mount: YES

Can be easily mounted on PCBs, saving space and enabling automated production processes

Maximum VCEsat: 0.25 V

Low saturation voltage ensures efficient operation and minimal power loss

No. of Elements: 2

Having 2 elements allows for more flexibility in circuit design

Maximum Power Dissipation (Abs): 0.385 W

Can handle moderate power dissipation, suitable for various applications

Minimum DC Current Gain (hFE): 80

Provides good amplification capability for signal processing

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for industrial environments

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, suitable for various circuit designs

Minimum Operating Temperature: -55 °C

Can operate in low temperature environments, providing versatility

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for various applications

Terminal Finish: MATTE TIN

Provides good electrical conductivity and solderability for reliable connections

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes

Reference Standard: AEC-Q101

Complies with automotive industry standards, ensuring quality and reliability

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5235DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

SMUN5235DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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