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SMUN5111DW1T1G

Onsemi

SMUN5111DW1T1G by Onsemi

SMUN5111DW1T1G by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Features include hFE of 35, IC of 0.1A, and power dissipation of 0.385W.

Median Price

$0.261

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,016 parts In-Stock

1+ parts

$0.261

100+ parts

$0.097

1k+ parts

$0.064

10k+ parts

-

6,016

$0.261

$0.097

$0.064

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DigiKey

USA . 5 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

1k+ parts

$0.071

10k+ parts

-

5

$0.290

$0.109

$0.071

-

Mouser Electronics

USA . 35,199 parts In-Stock

1+ parts

$0.330

100+ parts

$0.147

1k+ parts

$0.081

10k+ parts

$0.071

35,199

$0.330

$0.147

$0.081

$0.071

Flip Electronics (Authorized)

USA . 201,000 parts In-Stock

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-

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201,000

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Verical

USA . 6,016 parts In-Stock

1+ parts

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$0.065

10k+ parts

$0.049

6,016

-

-

$0.065

$0.049

Chip1Stop

Japan . 2,700 parts In-Stock

1+ parts

-

100+ parts

$0.080

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$0.071

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2,700

-

$0.080

$0.071

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.128

100+ parts

-

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10

$0.128

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TME

Poland . 2,940 parts In-Stock

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$0.270

100+ parts

$0.132

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2,940

$0.270

$0.132

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Digiode

USA . 163 parts In-Stock

1+ parts

$0.276

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163

$0.276

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Flip Electronics

USA . 201,000 parts In-Stock

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Bristol Electronics

USA . 100,000 parts In-Stock

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NAC Semi

USA . 48,000 parts In-Stock

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$0.056

48,000

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$0.056

NexGen Digital

USA . 36,000 parts In-Stock

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36,000

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Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Vyrian

USA . 13,014 parts In-Stock

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13,014

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Fibra_Brandt Electronic GMBH

Germany . 3,000 parts In-Stock

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3,000

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 44,283 parts In-Stock

1+ parts

$0.035

100+ parts

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44,283

$0.035

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Corohmni

South Africa . 256 parts In-Stock

1+ parts

$0.041

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256

$0.041

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Argo Parts USA

USA . 3,600 parts In-Stock

1+ parts

$0.128

100+ parts

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$0.124

3,600

$0.128

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-

$0.124

Corphita

USA . 255 parts In-Stock

1+ parts

$0.262

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255

$0.262

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Continental Prestige Electronics

USA . 23 parts In-Stock

1+ parts

$0.380

100+ parts

$0.186

1k+ parts

$0.104

10k+ parts

$0.082

23

$0.380

$0.186

$0.104

$0.082

Aztec Data Supply Inc.

USA . 148 parts In-Stock

1+ parts

$0.417

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148

$0.417

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Perfect Parts

USA . 698,543 parts In-Stock

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698,543

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iodParts Technologies Inc.

India . 698,543 parts In-Stock

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698,543

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GreenTree Electronics

Israel . 273,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 169,374 parts In-Stock

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169,374

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Formix International (Excess)

India . 43,260 parts In-Stock

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Eastek

USA . 36,000 parts In-Stock

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Lixinc

USA . 18,715 parts In-Stock

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Component Connect

USA . 10,752 parts In-Stock

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SupplyDigital Components

Austria . 7,833 parts In-Stock

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Problanco Electronics

Mexico . 3,049 parts In-Stock

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TANS Electronics

Latvia . 1,837 parts In-Stock

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1,837

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Kulean Microsystems

USA . 1,344 parts In-Stock

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1,344

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Kepictronics

USA . 1,077 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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100+ parts

$0.126

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$0.122

10k+ parts

$0.119

100

-

$0.126

$0.122

$0.119

Overview

Discover the top-of-the-line SMUN5111DW1T1G by Onsemi, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, featuring a PNP configuration with built-in resistors. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 35, this transistor offers superior performance and reliability. Its compact package shape and surface mount capability make it ideal for various electronic devices. Elevate your projects with the quality and value that Onsemi's SMUN5111DW1T1G brings to the table.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and allows for versatile applications.

Polarity or Channel Type

PNP - Enables efficient switching operations in electronic circuits.

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - Offers flexibility and simplified circuit design.

Transistor Application

SWITCHING - Ideal for fast switching applications in various electronic devices.

Surface Mount

YES - Facilitates easy and compact PCB assembly processes.

Package Shape

RECTANGULAR - Allows for efficient use of space on the circuit board.

Terminal Form

GULL WING - Ensures reliable solder connections during assembly.

No. of Elements

2 - Provides dual functionality within a single component.

No. of Terminals

6 - Offers multiple connection points for versatile circuit configurations.

Maximum Power Dissipation (Abs)

0.385 W - Ensures efficient power handling without overheating.

Package Style (Meter)

SMALL OUTLINE - Suitable for compact electronic device designs.

Minimum DC Current Gain (hFE)

35 - Ensures consistent amplification in signal processing applications.

Maximum Collector-Emitter Voltage

50 V - Supports a wide range of voltage requirements in circuits.

Transistor Element Material

SILICON - Provides reliable and consistent performance in various operating conditions.

Maximum Collector Current (IC)

0.1 A - Allows for moderate current handling capabilities in circuits.

Terminal Finish

MATTE TIN - Enhances solderability and ensures long-term reliability.

Terminal Position

DUAL - Facilitates easy and secure connections in circuit layouts.

Maximum Time At Peak Reflow Temperature (s)

30 - Ensures proper solder reflow during assembly processes.

Peak Reflow Temperature °C

260 - Supports high-temperature soldering for robust connections.

Reference Standard

AEC-Q101 - Complies with automotive industry standards for quality and reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5111DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5111DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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