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SMUN5211DW1T1G

Onsemi

SMUN5211DW1T1G by Onsemi

SMUN5211DW1T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.043

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 218 parts In-Stock

1+ parts

$0.300

100+ parts

$0.112

1k+ parts

$0.073

10k+ parts

$0.056

218

$0.300

$0.112

$0.073

$0.056

Verical

USA . 105,100 parts In-Stock

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$0.038

105,100

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$0.038

Flip Electronics (Authorized)

USA . 66,000 parts In-Stock

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66,000

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Avnet

USA . 9,000 parts In-Stock

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9,000

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Rochester

USA . 515 parts In-Stock

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$0.043

1k+ parts

$0.036

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$0.032

515

-

$0.043

$0.036

$0.032

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,543 parts In-Stock

1+ parts

$0.034

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1,543

$0.034

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Nova Conductors

Japan . 50 parts In-Stock

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$0.127

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50

$0.127

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Bristol Electronics

USA . 35,950 parts In-Stock

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$0.150

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$0.075

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$0.030

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$0.019

35,950

$0.150

$0.075

$0.030

$0.019

Vyrian

USA . 83,228 parts In-Stock

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Diverse Electronics

Canada . 54,000 parts In-Stock

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NAC Semi

USA . 36,000 parts In-Stock

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$0.088

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$0.088

Microfarads

USA . 32,724 parts In-Stock

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 16,000 parts In-Stock

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Contempo Components LLC

USA . 515 parts In-Stock

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515

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Distributors (Availability)

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Ampacity Inc.

Singapore . 67,988 parts In-Stock

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$0.031

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67,988

$0.031

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Corphita

USA . 1,096 parts In-Stock

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$0.032

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1,096

$0.032

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Corohmni

South Africa . 205 parts In-Stock

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$0.036

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205

$0.036

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Semicontronic

India . 60,798 parts In-Stock

1+ parts

$0.067

100+ parts

$0.065

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$0.065

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60,798

$0.067

$0.065

$0.065

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Argo Parts USA

USA . 4,008 parts In-Stock

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$0.127

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$0.124

4,008

$0.127

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$0.124

Aztec Data Supply Inc.

USA . 119 parts In-Stock

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$1.707

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119

$1.707

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Perfect Parts

USA . 527,307 parts In-Stock

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Authorized Procurement Solutions

USA . 318,000 parts In-Stock

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Continental Prestige Electronics

USA . 222,015 parts In-Stock

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$0.040

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$0.040

Kepictronics

USA . 189,508 parts In-Stock

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Metaverse IC Inc.

Canada . 189,508 parts In-Stock

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Eastek

USA . 144,000 parts In-Stock

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GreenTree Electronics

Israel . 121,600 parts In-Stock

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Glotronic Ltd.

UK . 120,000 parts In-Stock

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RC Electronics

USA . 74,632 parts In-Stock

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$0.130

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$0.120

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$0.110

74,632

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$0.110

Infinite Electronics LLP (Excess)

. 64,668 parts In-Stock

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64,668

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 7,807 parts In-Stock

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Kulean Microsystems

USA . 4,960 parts In-Stock

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Lixinc

USA . 4,358 parts In-Stock

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TANS Electronics

Latvia . 3,258 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,230 parts In-Stock

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SupplyDigital Components

Austria . 1,753 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.125

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$0.121

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$0.119

1,000

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$0.125

$0.121

$0.119

UHIMA Technologies

Türkiye . 894 parts In-Stock

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Overview

Discover the power of the SMUN5211DW1T1G by Onsemi, a top-notch Small Signal Bipolar Junction Transistor that guarantees superior quality and performance. With a focus on switching applications, this NPN transistor with built-in resistors offers unbeatable reliability and efficiency. Its compact design and gull wing terminals make it easy to install, perfect for a variety of electronic projects. Trust in Onsemi's reputation for excellence and innovation, and unlock endless possibilities with the SMUN5211DW1T1G. Elevate your electronics game today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - The use of this material provides a lightweight and durable housing for the transistor.

Polarity or Channel Type

NPN - NPN transistors are commonly used in amplification and switching circuits due to their high efficiency.

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - This configuration offers flexibility in circuit design and reduces the need for additional components.

Transistor Application

SWITCHING - Ideal for applications that require fast switching speeds and high efficiency.

Surface Mount

YES - Allows for easy installation on PCBs, saving space and simplifying assembly.

Package Shape

RECTANGULAR - The rectangular shape makes it compatible with standard PCB layouts.

Terminal Form

GULL WING - Gull wing terminals provide secure connections and facilitate automated soldering processes.

No. of Elements

2 - Two elements provide improved performance and reliability in circuit applications.

No. of Terminals

6 - Six terminals offer versatile connectivity options for various circuit configurations.

Maximum Power Dissipation (Abs)

0.256 W - The high maximum power dissipation allows for operation in demanding conditions.

Package Style (Meter)

SMALL OUTLINE - The small outline package saves space on the PCB and enhances thermal management.

Minimum DC Current Gain (hFE)

35 - A minimum DC current gain of 35 ensures stable and reliable amplification in circuit designs.

Maximum Collector-Emitter Voltage

50 V - This high voltage rating makes it suitable for a wide range of applications.

Transistor Element Material

SILICON - Silicon transistors are known for their high reliability and consistent performance.

Maximum Collector Current (IC)

0.1 A - The high maximum collector current allows for handling of large output currents.

Terminal Finish

MATTE TIN - Matte tin finish ensures a reliable electrical connection and minimizes soldering defects.

Terminal Position

DUAL - Dual terminal position provides flexibility in mounting and connection options.

Moisture Sensitivity Level (MSL)

1 - MSL 1 indicates that the transistor is suitable for standard soldering and assembly processes.

Maximum Time At Peak Reflow Temperature (s)

30 - Can withstand peak reflow temperatures of up to 260°C for 30 seconds, ensuring robust solder joints.

Peak Reflow Temperature °C

260 - Withstands high peak reflow temperatures, making it suitable for lead-free soldering processes.

Reference Standard

AEC-Q101 - Complies with automotive industry standards, ensuring high quality and reliability for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5211DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5211DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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