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SMUN5214DW1T1G

Onsemi

SMUN5214DW1T1G by Onsemi

SMUN5214DW1T1G by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.256W. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,280 parts In-Stock

1+ parts

$0.011

100+ parts

$0.009

1k+ parts

$0.007

10k+ parts

-

1,280

$0.011

$0.009

$0.007

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Newark

USA . 1,416 parts In-Stock

1+ parts

$0.278

100+ parts

$0.106

1k+ parts

$0.069

10k+ parts

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1,416

$0.278

$0.106

$0.069

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Mouser Electronics

USA . 3,647 parts In-Stock

1+ parts

$0.290

100+ parts

$0.110

1k+ parts

$0.071

10k+ parts

$0.063

3,647

$0.290

$0.110

$0.071

$0.063

Chip1Stop

Japan . 159,000 parts In-Stock

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$0.041

159,000

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$0.041

Rochester

USA . 36,000 parts In-Stock

1+ parts

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100+ parts

$0.085

1k+ parts

$0.070

10k+ parts

$0.063

36,000

-

$0.085

$0.070

$0.063

Avnet

USA . 6,000 parts In-Stock

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$0.034

6,000

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$0.034

Farnell

UK . 4,891 parts In-Stock

1+ parts

-

100+ parts

$0.089

1k+ parts

$0.058

10k+ parts

$0.047

4,891

-

$0.089

$0.058

$0.047

Element14

Singapore . 4,891 parts In-Stock

1+ parts

-

100+ parts

$0.150

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$0.113

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4,891

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$0.150

$0.113

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Verical

USA . 1,280 parts In-Stock

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$0.007

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1,280

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$0.007

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Distributors (In-Stock)

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Digiode

USA . 69 parts In-Stock

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$0.034

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69

$0.034

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Nova Conductors

Japan . 50 parts In-Stock

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$0.129

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50

$0.129

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TME

Poland . 2,987 parts In-Stock

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$0.270

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$0.140

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2,987

$0.270

$0.140

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Bristol Electronics

USA . 6,140 parts In-Stock

1+ parts

$0.450

100+ parts

$0.225

1k+ parts

$0.090

10k+ parts

$0.068

6,140

$0.450

$0.225

$0.090

$0.068

NAC Semi

USA . 708,000 parts In-Stock

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$0.088

708,000

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$0.088

Vyrian

USA . 63,674 parts In-Stock

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63,674

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Flip Electronics

USA . 42,078 parts In-Stock

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Chip Stock

USA . 19,000 parts In-Stock

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IBS Electronics

USA . 9,000 parts In-Stock

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$0.071

9,000

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$0.071

LIBRA Elektronik GmbH

Germany . 3,273 parts In-Stock

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3,273

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Microfarads

USA . 2,694 parts In-Stock

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Sensible Micro Corp

USA . 2,329 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,999 parts In-Stock

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Dan-Mar Components

USA . 1,999 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 67,158 parts In-Stock

1+ parts

$0.031

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67,158

$0.031

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Corphita

USA . 421 parts In-Stock

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$0.032

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421

$0.032

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Corohmni

South Africa . 469 parts In-Stock

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$0.036

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469

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Argo Parts USA

USA . 4,735 parts In-Stock

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$0.128

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$0.124

4,735

$0.128

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$0.124

Aztec Data Supply Inc.

USA . 335 parts In-Stock

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$1.140

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335

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Perfect Parts

USA . 110,880 parts In-Stock

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Formix International (Excess)

India . 108,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 58,814 parts In-Stock

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Kepictronics

USA . 41,668 parts In-Stock

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41,668

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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Continental Prestige Electronics

USA . 21,000 parts In-Stock

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$0.112

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Glotronic Ltd.

UK . 14,400 parts In-Stock

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Lixinc

USA . 7,452 parts In-Stock

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7,452

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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$0.130

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Problanco Electronics

Mexico . 3,493 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.126

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$0.122

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$0.120

2,000

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$0.126

$0.122

$0.120

SupplyDigital Components

Austria . 834 parts In-Stock

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834

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Kulean Microsystems

USA . 810 parts In-Stock

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TANS Electronics

Latvia . 353 parts In-Stock

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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Overview

Discover the SMUN5214DW1T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a built-in resistor and NPN polarity, this transistor offers unmatched reliability and performance. Perfect for a wide range of electronic projects, this component ensures seamless operation and efficiency. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits this product brings to your designs. Upgrade your circuits with the SMUN5214DW1T1G and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5214DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN5214DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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