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SMUN2211T1G

Onsemi

SMUN2211T1G by Onsemi

SMUN2211T1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has hFE of 35, VCE of 50V, and IC of 0.1A. The package is surface mount with Gull Wing terminals in a small outline shape.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 20,580 parts In-Stock

1+ parts

$0.174

100+ parts

$0.070

1k+ parts

$0.045

10k+ parts

$0.029

20,580

$0.174

$0.070

$0.045

$0.029

DigiKey

USA . 119,024 parts In-Stock

1+ parts

$0.210

100+ parts

$0.078

1k+ parts

$0.050

10k+ parts

-

119,024

$0.210

$0.078

$0.050

-

Mouser Electronics

USA . 30,255 parts In-Stock

1+ parts

$0.210

100+ parts

$0.078

1k+ parts

$0.050

10k+ parts

$0.038

30,255

$0.210

$0.078

$0.050

$0.038

Newark

USA . 228,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.043

228,000

-

-

-

$0.043

Rochester

USA . 57,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

57,000

-

$0.030

$0.025

$0.023

Verical

USA . 20,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.045

10k+ parts

$0.029

20,580

-

-

$0.045

$0.029

Chip1Stop

Japan . 7,900 parts In-Stock

1+ parts

-

100+ parts

$0.051

1k+ parts

$0.038

10k+ parts

$0.022

7,900

-

$0.051

$0.038

$0.022

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

-

-

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RS (Exports)

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.031

1k+ parts

$0.023

10k+ parts

$0.022

2,000

-

$0.031

$0.023

$0.022

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,340 parts In-Stock

1+ parts

$0.024

100+ parts

-

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-

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1,340

$0.024

-

-

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Nova Conductors

Japan . 77 parts In-Stock

1+ parts

$0.046

100+ parts

-

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77

$0.046

-

-

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IBS Electronics

USA . 135,000 parts In-Stock

1+ parts

-

100+ parts

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$0.032

135,000

-

-

-

$0.032

NAC Semi

USA . 102,000 parts In-Stock

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102,000

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-

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Chip Stock

USA . 44,000 parts In-Stock

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44,000

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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A2Z Electronics, Inc.

USA . 6,000 parts In-Stock

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6,000

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Vyrian

USA . 5,048 parts In-Stock

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5,048

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ComSIT Distribution GmbH

Germany . 1,329 parts In-Stock

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1,329

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 41,974 parts In-Stock

1+ parts

$0.018

100+ parts

-

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-

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41,974

$0.018

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Corphita

USA . 374 parts In-Stock

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$0.022

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374

$0.022

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Corohmni

South Africa . 276 parts In-Stock

1+ parts

$0.024

100+ parts

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276

$0.024

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Argo Parts USA

USA . 1,949 parts In-Stock

1+ parts

$0.046

100+ parts

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10k+ parts

$0.044

1,949

$0.046

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-

$0.044

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.046

100+ parts

$0.045

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-

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100

$0.046

$0.045

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$1.140

100+ parts

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100

$1.140

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Perfect Parts

USA . 267,847 parts In-Stock

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267,847

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Continental Prestige Electronics

USA . 72,000 parts In-Stock

1+ parts

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100+ parts

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$0.029

72,000

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$0.029

Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Infinite Electronics LLP (Excess)

. 12,009 parts In-Stock

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12,009

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TANS Electronics

Latvia . 7,078 parts In-Stock

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7,078

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Kulean Microsystems

USA . 7,017 parts In-Stock

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7,017

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Problanco Electronics

Mexico . 3,523 parts In-Stock

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3,523

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Lixinc

USA . 2,974 parts In-Stock

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2,974

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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892

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Authorized Procurement Solutions

USA . 858 parts In-Stock

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858

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GreenTree Electronics

Israel . 858 parts In-Stock

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858

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SupplyDigital Components

Austria . 56 parts In-Stock

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56

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Overview

Discover the SMUN2211T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor with NPN polarity and a single configuration equipped with a built-in resistor. Ideal for switching applications, this transistor offers unparalleled performance and reliability. With its surface mount capability and small outline package style, it is perfect for compact designs. Trust in Onsemi's reputation for excellence and innovation to deliver a product that exceeds expectations. Upgrade your projects with the SMUN2211T1G and experience the value and benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used and easily interchangeable, making this product versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Ideal for automated assembly processes, saving time and cost during production.

Package Shape: RECTANGULAR

Rectangular shape fits well with other components on the PCB, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, reducing the risk of disconnection.

No. of Terminals: 3

Simplified connection with only 3 terminals, making it easy to integrate into circuits.

Maximum Power Dissipation (Abs): 0.338 W

Designed to handle moderate power dissipation, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB and allows for high-density mounting.

Minimum DC Current Gain (hFE): 35

Ensures consistent and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 50 V

Allows for a wide range of operating voltages, increasing versatility in circuit design.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and connection options.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN2211T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMUN2211T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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