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NSBC124XF3T5G

Onsemi

NSBC124XF3T5G by Onsemi

NSBC124XF3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has max. collector-emitter voltage of 50V, max. collector current of 0.1A, and min. DC current gain of 80 (hFE). This small outline transistor in plastic package is ideal for surface mount designs.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 312,000 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.085

10k+ parts

$0.075

312,000

-

$0.102

$0.085

$0.075

DigiKey

USA . 312,000 parts In-Stock

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-

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$0.130

312,000

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$0.130

Verical

USA . 312,000 parts In-Stock

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$0.094

312,000

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$0.094

Distributors (In-Stock)

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Digiode

USA . 1,449 parts In-Stock

1+ parts

$0.083

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1,449

$0.083

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Chip Stock

USA . 46,000 parts In-Stock

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46,000

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Vyrian

USA . 11,380 parts In-Stock

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11,380

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Distributors (Availability)

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Corphita

USA . 1,809 parts In-Stock

1+ parts

$0.078

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1,809

$0.078

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Corohmni

South Africa . 419 parts In-Stock

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$0.087

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419

$0.087

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AZTECH Wire

Italy . 299 parts In-Stock

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$18.360

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299

$18.360

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Continental Prestige Electronics

USA . 312,000 parts In-Stock

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$0.083

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312,000

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$0.083

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Problanco Electronics

Mexico . 7,826 parts In-Stock

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SupplyDigital Components

Austria . 4,310 parts In-Stock

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Kulean Microsystems

USA . 4,273 parts In-Stock

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TANS Electronics

Latvia . 4,034 parts In-Stock

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UHIMA Technologies

Türkiye . 139 parts In-Stock

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Overview

Upgrade your electronic designs with the NSBC124XF3T5G from Onsemi, a top-quality NPN small signal bipolar junction transistor with a built-in resistor. Perfect for switching applications, this surface-mount transistor offers reliability and efficiency in a compact rectangular package. With a maximum power dissipation of 0.297W and a minimum DC current gain of 80, this transistor provides superior performance and value for your projects. Trust in Onsemi's expertise and elevate your designs with the NSBC124XF3T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications in different environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, offering reliability and versatility.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it efficient for use in various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in different electronic systems.

Surface Mount: YES

Can be easily mounted on circuit boards, saving assembly time and providing a compact design for the end product.

Maximum Power Dissipation (Abs): 0.297 W

Can handle a reasonable amount of power dissipation, suitable for small signal applications without overheating.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit layouts and compatibility with standard PCB designs.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering during assembly.

No. of Terminals: 3

Simplifies circuit connections and reduces the chance of errors in wiring or installation.

Minimum DC Current Gain (hFE): 80

Provides high current gain, ensuring efficient amplification of small signals in various electronic circuits.

Maximum Collector-Emitter Voltage: 50 V

Handles up to 50 volts safely, suitable for low voltage applications where precise switching is required.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a preferred choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

Handles up to 0.1 ampere of current, suitable for small signal amplification and switching tasks.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides corrosion resistance and ensures good solderability for a reliable connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and connection options, accommodating different layout requirements.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC124XF3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 2.14

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC124XF3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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