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MMUN2140LT1G

Onsemi

MMUN2140LT1G by Onsemi

MMUN2140LT1G by Onsemi is a PNP BJT with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 120. This surface-mount transistor comes in a small outline package with matte tin finish.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 300,000 parts In-Stock

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NAC Semi

USA . 240,000 parts In-Stock

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Chip Stock

USA . 62,000 parts In-Stock

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Vyrian

USA . 10,185 parts In-Stock

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Digiode

USA . 1,460 parts In-Stock

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AZTECH Wire

Italy . 1,086 parts In-Stock

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$10.130

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Ampacity Inc.

Singapore . 608 parts In-Stock

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$16.050

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608

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TANS Electronics

Latvia . 4,991 parts In-Stock

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Problanco Electronics

Mexico . 2,373 parts In-Stock

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Corphita

USA . 2,108 parts In-Stock

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Kulean Microsystems

USA . 1,285 parts In-Stock

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SupplyDigital Components

Austria . 968 parts In-Stock

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UHIMA Technologies

Türkiye . 839 parts In-Stock

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Corohmni

South Africa . 158 parts In-Stock

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Overview

Enhance your electronic projects with the MMUN2140LT1G by Onsemi! Manufactured by a trusted industry leader, this Small Signal Bipolar Junction Transistor offers exceptional quality and reliability. Ideal for switching applications, this PNP transistor with a built-in resistor provides seamless performance and efficiency. With its compact size and high power dissipation, this transistor is perfect for a wide range of projects. Upgrade your circuits and experience superior performance with the MMUN2140LT1G from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good durability and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits that require PNP transistors, making this product versatile for different applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for designs where resistors are needed.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it suitable for use in various electronic devices.

Surface Mount: YES

Being surface mountable enables easy and efficient soldering onto PCBs, saving assembly time and allowing for high-density board designs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and orientation on the PCB, aiding in the assembly process.

Terminal Form: GULL WING

The gull wing terminal form offers good mechanical strength and ease of soldering during the assembly process, ensuring reliable connections.

No. of Terminals: 3

With three terminals, this transistor provides the necessary connections for its operation while keeping the design simple and compact.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle moderate power levels, making it suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs, which is beneficial for designs with size constraints.

Minimum DC Current Gain (hFE): 120

The minimum DC current gain of 120 ensures stable and reliable amplification of current in the transistor, making it suitable for various signal amplification applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage levels, suitable for a wide range of voltage requirements in circuits.

Transistor Element Material: SILICON

The silicon material used in the transistor element offers good thermal and electrical properties, ensuring consistent performance and reliability.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for handling moderate current levels, making this transistor suitable for low to medium current applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides good solderability and electrical conductivity, ensuring reliable connections during assembly and operation.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in mounting and connectivity options, making it easier to integrate into different circuit layouts.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2140LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2140LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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