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MMUN2113LT1G

Onsemi

MMUN2113LT1G by Onsemi

MMUN2113LT1G by Onsemi is a PNP BJT transistor with a max VCEsat of 0.25V and hFE of 80, ideal for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. This surface-mount transistor comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 32,690 parts In-Stock

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$0.154

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Arrow

USA . 2,300 parts In-Stock

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$0.154

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$0.057

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$0.035

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$0.016

2,300

$0.154

$0.057

$0.035

$0.016

Rochester

USA . 769,690 parts In-Stock

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$0.020

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$0.017

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769,690

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DigiKey

USA . 769,690 parts In-Stock

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Verical

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Flip Electronics (Authorized)

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RS (Exports)

UK . 12,225 parts In-Stock

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$0.013

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$0.083

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$0.078

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Distributors (In-Stock)

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Digiode

USA . 1,012 parts In-Stock

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Maritex

Poland . 1,502 parts In-Stock

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1,502

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Tomark Electronics Ltd

UK . 7,040 parts In-Stock

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Vyrian

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Chip Stock

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NAC Semi

USA . 24,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,288 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,981 parts In-Stock

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Bristol Electronics

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Florida Circuit

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Sunrise Surplus Inc.

USA . 489 parts In-Stock

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ComSIT Distribution GmbH

Germany . 257 parts In-Stock

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J2 Sourcing AB

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Nova Conductors

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LittleDiode

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Component Stockers USA

USA . 1,860,520 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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Corphita

USA . 534 parts In-Stock

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Ampacity Inc.

Singapore . 169,993 parts In-Stock

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Aztec Data Supply Inc.

USA . 468 parts In-Stock

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BidChips

USA . 1,491,768 parts In-Stock

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iBuyXS LLC

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Infinite Electronics LLP (Excess)

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Perfect Parts

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Continental Prestige Electronics

USA . 888,500 parts In-Stock

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GreenTree Electronics

Israel . 375,000 parts In-Stock

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Authorized Procurement Solutions

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Eastek

USA . 261,000 parts In-Stock

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RC Electronics

USA . 107,171 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Component Connect

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Cyclops Electronics Ltd (Excess)

UK . 8,533 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 4,850 parts In-Stock

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TANS Electronics

Latvia . 4,644 parts In-Stock

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SupplyDigital Components

Austria . 4,041 parts In-Stock

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Argo Parts USA

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Kepictronics

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Glotronic Ltd.

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Lixinc

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Aranea Global

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UHIMA Technologies

Türkiye . 473 parts In-Stock

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Overview

Unleash the power of innovation with the MMUN2113LT1G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that exceeds industry standards. Manufactured by Onsemi, this PNP transistor boasts a single configuration with a built-in resistor, perfect for switching applications. Its compact design and high-quality materials ensure optimal performance and reliability. Experience seamless integration with its surface mount capability and take advantage of its low VCEsat of 0.25V, making it a game-changer in the field. Elevate your projects with the MMUN2113LT1G by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Offers versatility in circuit design and compatibility with other components.

Configuration: SINGLE WITH BUILT-IN RESISTOR

simplifies circuit design and saves space by eliminating the need for external resistors.

Transistor Application: SWITCHING

Allows for efficient control of electronic circuits, making it ideal for automation and power management systems.

Surface Mount: YES

Easy to install and saves space on PCB, making it suitable for compact designs.

Maximum VCEsat: 0.25 V

Low saturation voltage reduces power consumption and heat generation in the transistor.

Package Shape: RECTANGULAR

Allows for easy integration into circuit boards and efficient use of space.

Terminal Form: GULL WING

Provides secure and reliable solder connections for optimal performance.

No. of Terminals: 3

Simplifies circuit connections and reduces the likelihood of errors during installation.

Maximum Power Dissipation (Abs): 0.2 W

Helps to prevent overheating and ensures reliable operation in demanding environments.

Package Style (Meter): SMALL OUTLINE

Offers a compact footprint, ideal for applications where space is limited.

Minimum DC Current Gain (hFE): 80

Ensures consistent amplification of signals for reliable performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Allows for operation in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Provides flexibility in circuit design and compatibility with a wide range of components.

Transistor Element Material: SILICON

Offers excellent performance and reliability, making it a suitable choice for various applications.

Minimum Operating Temperature: -55 °C

Ensures reliable operation even in extremely cold environments.

Maximum Collector Current (IC): 0.1 A

Supports a range of current requirements in different circuit configurations.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a durable finish for soldering, ensuring long-term reliability.

Terminal Position: DUAL

Facilitates easy connection to other components for a streamlined circuit design.

Maximum Time At Peak Reflow Temperature: 40s

Ensures reliable solder connections during manufacturing processes.

Peak Reflow Temperature: 260 C

Allows for efficient and consistent soldering during assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2113LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

MMUN2113LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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